Abstract:Features and main technological methods of forming thin layers of semiconductor materials by methods of chemical deposition and mechanical application are analyzed. The disadvantages of thermal sputtering and cathodic sputtering of thin films in vacuum for multicomponent semiconductor compounds are indicated. Features of chemical deposition of semiconductor films from the gas (steam) phase are presented. Such deposition involves the transfer of source material from the evaporator zone with higher temperature in the form of volatile compounds to the colder surface of the substrate, where the film growth occurs as a result of reaction of transported compounds or their decomposition. It is shown that the growth of the film during chemical vapor deposition is a process of layer-by-layer condensation of atoms or molecules, with the advantageous difference that during chemical deposition the latter are formed as a result of a heterogeneous chemical reaction when there is no need for average free path length of the gas molecules to be larger than the size of the deposition chamber, i.e. no need for critical degree of vacuum. Chemical deposition of thin films from solution is characterized as a process of precipitation of solute which occurs due to the fact that the ionic product exceeds the product of solubility, i.e. it is greater than the constant value characteristic of a saturated solution in the equilibrium state. We emphasize, that chemical deposition from an water solution allows to obtain homogeneous in thickness and structure fine-grained non-textured mechanically stable polycrystalline films with good adhesion to substrates and the required set of properties. The method of pulverization with subsequent pyrolysis is described. This is deposition from intracomplex organometallic compounds, which is based on thermally stimulated reactions between clusters of atoms, chemically active substances of liquid or vapor phase. The method of electrolytic deposition on electrically conductive substrates is characterized. The method is using appropriate salt solutions by co-deposition of individual components, or by deposition on the cathode of one of the components with its subsequent interaction with others present in the solution. We also describe the method of obtaining epitaxial thin films of semiconductor deposition materials. We note that the analyzed methods or their modifications are necessary tool today to create thin-film semiconductor structures with predetermined properties. In the same time, in each particular case the features of each method of obtaining thin semiconductor films should be comprehensively evaluated and, depending on the chemical composition, structure, topology and complex of expected properties, the most effective method should be applied.

Kinetics of polysilicon film growth by thermal decomposition of silane

Kinetics of Silane Decomposition in High-Pressure Confined Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor deposition

Chemical Vapor Deposition of Silicon in a Lamp-Heated Reactor

Chemical Vapor Deposition Of Silicon In A Lamp-Heated Reactor - Effects Of Heat Absorption, Emission, And Conduction

A transport-kinetic model development for polysilicon chemical vapor deposition in a SiHCl3–H2 system

Effects of Growth Kinetics and Surface Emissivity on Chemical Vapor Deposition of Silicon in a Lamp-Heated Single-Wafer Reactor

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Numerical simulation of granular silicon growth and silicon fines formation process in polysilicon fluidized bed

Silicon nitride films deposited from SiH2Cl2NH3 by low pressure chemical vapor deposition: kinetics, thermodynamics, composition and structure

A Kinetic Model for the Initial Growth of Diamond Films

Mechanism of the silane decomposition. I. Silane loss kinetics and rate inhibition by hydrogen. II. Modeling of the silane decomposition (all stages of reaction)

Heat and mass transfer characteristics of three-dimensional bell-shaped polysilicon chemical vapor deposition reactor

Characterization of in Situ Phosphorus‐Doped Polycrystalline Silicon Films Grown by Disilane‐Based Low‐Pressure Chemical Vapor Deposition

Electrogravimetry and Structural Properties of Thin Silicon Layers Deposited in Sulfolane and Ionic Liquid Electrolytes

Unravelling the Mechanism of Electrochemically Induced Sol-Gel Depositions: pH Profiles Near Electrode and Influence on Film Growth

Manufacture of Granular Polysilicon from Trichlorosilane in a Fluidized-Bed Reactor

Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System

Chemical deposition and mechanical application of semiconductors thin films

CFD-Aided Design for Polysilicon Production System