Abstract:The traditional unresolved CFD-DEM method is designed for fluid grid sizes larger than particle sizes, and improved methods are imperative when encountering cases with fluid grid sizes comparable to particle sizes. This study attempts to develop an unresolved CFD-DEM method that applies to different-sized grids and can be easily implemented on commercial platforms using unstructured grids, aiming to greatly help engineers solve engineering problems without investing much effort into choosing appropriate simulation methods and designing fluid grids. To this end, the new method considers interphase force correction at the particle level and field smoothing at the cell level by constructing a spherical search area whose size is determined by particle sizes. Mass conservation is strictly guaranteed in the new method, which is essential to simulations involving chemical reactions. The accuracy and universality of the new method are comprehensively evaluated by two test cases. The first test case is conducted in a spouted bed discretized by unstructured grids of three sizes. The results demonstrate that the new method not only applies to comparable-sized grids but can yield the same predictions as the traditional method in large-sized grids. In other words, the new method is universal as long as grid sizes lie at the unresolved level. Thanks to the simplicity of the algorithm, the new method does not compromise calculation efficiency. The second test case is conducted in a draft tube-type feeder discretized by non-uniform unstructured grids. By comparing with experimental measurements, the main features of flow patterns, pressure drop characteristics, and mass flow rates are reasonably predicted, confirming the capability of the new method to simulate complex gas-solid flows with non-uniform unstructured grids. Users do not need to make any adjustments to the new method once it is implemented on commercial platforms. In the future, the new method can potentially become a universal method to simulate gas-solid flows and greatly help engineers solve engineering problems.

Grid quality and its influence on accuracy and convergence in device simulation

Numerical Simulations Of Nonlinear Current-Voltage Characteristics Of Nano-Channels: A Benchmark Study

An improved AMG-based method for fast power grid analysis

Early-stage power grid analysis using a supenode-like formulation of circuit equations

Early-Stage Power Grid Design

Fast voltage drop modeling of power grid with application to silicon interposer analysis

Enabling Cutting-Edge Semiconductor Simulation Through Grid Technology

Development and Verification of an Unresolved CFD-DEM Method Applicable to Different-Sized Grids

Accurate Numerical Methods for Micromagnetics Simulations with General Geometries

Adaptive Local Mesh Refinement for Steady State and Transient Simulation of Semiconductor Devices

Reduction of the grid effects in simulation plasmas

SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 3 Edited by G. Baccarani, M. Rudan - Bologna (Italy) September 26-28,1988 - Tecnoprint APPLICATION OF LOCAL N E U M A N N ERROR CRITERIA FOR REMESHING IN DOPANT DIFFUSION PROBLEMS

Solutions to the Convergence Problems in Simulating Wide-bandgap Semiconductor Devices

A High-Accuracy Discretization Scheme for Numerical Device Simulations

Convergence Study of Traditional 2D/1D Coupling Method for K-Eigenvalue Neutron Transport Problems with Fourier Analysis

A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs

Derivative of Electron Density in Non-Equilibrium Green'S Function Technique and Its Application to Boost Performance of Convergence

Three-dimensional numerical semiconductor device simulation: algorithms, architectures, results

A robust hybridizable discontinuous Galerkin scheme with harmonic averaging technique for steady state of real-world semiconductor devices

Fourier Analysis of the Effect of Grid Non-Orthogonality on the Simple Algorithm

Simulation of the hydrodynamic model of semiconductor devices by a finite element method