Abstract:The synergistic effects between total ionizing dose (TID) and transient dose rate (TDR) effects are explored. To implement the analysis, a stable 3D parallel numerical scheme is specially developed. Using the control volume finite element tearing and interconnect (CV-FETI) method, the discontinuous boundary conditions can be included with the usual numerical properties. Newton's method is employed to overcome the nonconvergence brought by the nonlinear property of the drift- diffusion model. Compared to with the commercial COMSOL Multiphysics software, our CV-FETIM shows strong numerical stability on unstructured meshes. The proposed method is validated by comparing the numerical results with those calculated using commercial software. Then, this new solver is applied to simulate MOSFET, STI-based LDMOSFET, and FinFET. By adjusting the dose rate, oxide traps, and interface traps, the independent TID, independent TDR, and TID-TDR synergistic effects are investigated. On picosecond or nanosecond timescales, the duration, amplitude, and decline rate of the radiation-induced photocurrent are studied. Moreover, the influence of interface traps on different surfaces is compared. The numerical results indicated that the developed numerical scheme possesses good stability, accuracy, and applicability.

SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 3 Edited by G. Baccarani, M. Rudan - Bologna (Italy) September 26-28,1988 - Tecnoprint APPLICATION OF LOCAL N E U M A N N ERROR CRITERIA FOR REMESHING IN DOPANT DIFFUSION PROBLEMS

SIMPLE REMESHING SCHEME FOR THE FINITE ELEMENT BASED SIMULATION OF DOPANT DIFFUSION IN SILICON.

Adaptive Meshing Schemes for Simulating Dopant Diffusion

Skeleton-Enhanced Discontinuous Galerkin Method for 3-D Nonlinear Semiconductor Modeling

Contour Meshing With a One Dimensional Remeshing Scheme for the Simulation ' of MOS Source / Drain Diffusion

Quasilinear Formulation with a Simple Remeshing Scheme for the Finite Element Based Simulation of Dopant Diffusion in Silicon

An Improved Algorithm for Drift Diffusion Transport and Its Application on Large Scale Parallel Simulation of Resistive Random Access Memory Arrays

A New Multilevel Green's Function Interpolation Method for Large Scale EM Simulations in RF ICs

Computational Analysis of Mechanical and Electromigration Reliability Problems

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

A composite algorithm of lithography process in AlGaN/GaN-on-SiC HEMTs manufacturing

Adaptive Local Mesh Refinement for Steady State and Transient Simulation of Semiconductor Devices

Parallel Computational Techniques for Simulating Dopant Diffusion in Silicon

Three-dimensional numerical semiconductor device simulation: algorithms, architectures, results

Electro-Thermo-Chemical Computational Models for 3D Heterogeneous Semiconductor Device Simulation

COMPUTATIONAL INVESTIGATION OF NANOSCALE SEMICONDUCTOR DEVICES AND OPTOELECTRONIC DEVICES FROM THE ELECTROMAGNETICS AND QUANTUM PERSPECTIVES BY THE FINITE DIFFERENCE TIME DOMAIN METHOD (INVITED REVIEW)

Moving Mesh Method for Semiconductor Device Simulations

3D Simulations of Electromagnetic Fields in Nanostructures using the Time-Harmonic Finite-Element Method

Moving mesh adaptation for Si and GaN-based power device simulation

A High-Accuracy Discretization Scheme for Numerical Device Simulations

Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers