A High-Accuracy Discretization Scheme for Numerical Device Simulations

ZM Teng,TB Chen,SJ Cai,FY Zhang
DOI: https://doi.org/10.1080/002072197136228
1997-01-01
International Journal of Electronics
Abstract:To avoid non-physical oscillations resulting from discretization schemes, the finite difference scheme developed by Scharfetter and Gummel (1969) (the SG scheme) is widely used in numerical device simulations. However, this scheme is equivalent to the optimal first-order upwind scheme, so the crosswind diffusion is inherent in the SG scheme for multidimensional problems. To reduce its influence on the results of numerical device simulations, a new discretization approach with higher accuracy than the SG scheme for the convection term included in semiconductor device models is presented. To compare their results, the present scheme is interpolated into MINIMOS 4.0, which is a popular software in numerical MOSFET simulations. The discretization equations are solved by the conjugate gradient scheme for non-symmetrical linear equations with the preconditioning technique of the incomplete LU factorization (ILUCGS scheme). The numerical results show that the convection term must be discretized by those schemes with high accuracy, or the results may not represent the realistic solutions of the physical model.
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