Abstract:In this manuscript, carrier transport simulation methods are proposed for devices with the coexistence of quantum transport and diffusive transport by combining the nonequilibrium Green's function method with the drift-diffusion transport simulation method. Current continuity between quantum transport and drift-diffusion transport is ensured by setting quantum transport current as the connection boundary condition of drift-diffusion simulation or by introducing quantum transport-induced carrier generation rates to drift-diffusion simulation. A comprehensive study of our method and the method combining the Wentzel–Kramers–Brillouin (WKB) method with the drift-diffusion transport simulation method is performed for n-type tunnel oxide passivating contact solar cell to investigate their applicable conditions and balance the accuracy and computational cost. As the oxide barrier width, barrier height, and electron effective mass increase, or the doping concentration in the electron transport layer decreases to the extent that the blocking effect of the oxide barrier on light-generated electrons becomes significant, method I is more accurate since the transmission coefficient near the conduction band edge calculated by WKB is overestimated; otherwise, method II is more suitable due to its low computational cost without the loss of accuracy. In addition, the differences between current densities, carrier densities, and Shockley–Read–Hall recombination rates simulated under the two current continuity conditions for the solar cell with different carrier mobilities are also further explored and analyzed.

A Hybrid Upwind Scheme to Reduce the Crosswind Diffusion Inherent in the SG Scheme for Semiconductor Device Simulations

Influence of the crosswind diffusion on the results of semiconductor device simulations

Efficient implementation of finite difference schemes for semiconductor device simulations

A High-Accuracy Discretization Scheme for Numerical Device Simulations

Carrier Transport Simulation Methods for Electronic Devices with Coexistence of Quantum Transport and Diffusive Transport

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

High-order Discontinuous Galerkin Method for Vacuum Electron Device Modeling

An Improved Hybrid Particle Scheme for Hypersonic Rarefied-Continuum Flow

Modeling Simplification for Thermal Mechanical Stress Analysis of TSV Interposer Stack

A Hybrid Streamline Upwind Finite Volume-Finite Element Method for Semiconductor Continuity Equations

A robust hybridizable discontinuous Galerkin scheme with harmonic averaging technique for steady state of real-world semiconductor devices

Quasilinear Formulation with a Simple Remeshing Scheme for the Finite Element Based Simulation of Dopant Diffusion in Silicon

Adaptive Local Mesh Refinement for Steady State and Transient Simulation of Semiconductor Devices

Source Term Treatment of SWEs Using Surface Gradient Upwind Method

Multidimensional Upwind Scheme of Diagonal Cartesian Method for an Advection–diffusion Problem

Mixed-RKDG Finite Element Methods for the 2-D Hydrodynamic Model for Semiconductor Device Simulation.

Analysis and applications of the upwind conservation element and solution element scheme for compressible flow simulations

Low Dispersion and Boundedness Practical Discretization Scheme

Extended Hydrodynamic Models and Multigrid Solver of A Silicon Diode Simulation

A Relaxation Scheme for the Hydrodynamic Equations for Semiconductors

Moving Mesh Method for Semiconductor Device Simulations