Abstract:In this manuscript, carrier transport simulation methods are proposed for devices with the coexistence of quantum transport and diffusive transport by combining the nonequilibrium Green's function method with the drift-diffusion transport simulation method. Current continuity between quantum transport and drift-diffusion transport is ensured by setting quantum transport current as the connection boundary condition of drift-diffusion simulation or by introducing quantum transport-induced carrier generation rates to drift-diffusion simulation. A comprehensive study of our method and the method combining the Wentzel–Kramers–Brillouin (WKB) method with the drift-diffusion transport simulation method is performed for n-type tunnel oxide passivating contact solar cell to investigate their applicable conditions and balance the accuracy and computational cost. As the oxide barrier width, barrier height, and electron effective mass increase, or the doping concentration in the electron transport layer decreases to the extent that the blocking effect of the oxide barrier on light-generated electrons becomes significant, method I is more accurate since the transmission coefficient near the conduction band edge calculated by WKB is overestimated; otherwise, method II is more suitable due to its low computational cost without the loss of accuracy. In addition, the differences between current densities, carrier densities, and Shockley–Read–Hall recombination rates simulated under the two current continuity conditions for the solar cell with different carrier mobilities are also further explored and analyzed.

Influence of the crosswind diffusion on the results of semiconductor device simulations

A Hybrid Upwind Scheme to Reduce the Crosswind Diffusion Inherent in the SG Scheme for Semiconductor Device Simulations

Efficient implementation of finite difference schemes for semiconductor device simulations

A High-Accuracy Discretization Scheme for Numerical Device Simulations

Carrier Transport Simulation Methods for Electronic Devices with Coexistence of Quantum Transport and Diffusive Transport

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

High-order Discontinuous Galerkin Method for Vacuum Electron Device Modeling

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Analysis of a Finite Element Method for the Drift-Diffusion Semiconductor Device Equations: the Multidimensional Case

Quasilinear Formulation with a Simple Remeshing Scheme for the Finite Element Based Simulation of Dopant Diffusion in Silicon

Error analysis of drift-diffusion model of semiconductor device numerical simulation

A Hybrid Streamline Upwind Finite Volume-Finite Element Method for Semiconductor Continuity Equations

Validation Analysis And Test Of Semiconductor Device Simulator Gsres

Adaptive Local Mesh Refinement for Steady State and Transient Simulation of Semiconductor Devices

Calibration of Drift-Diffusion Model in Quasi-Ballistic Transport Region for FinFETs.

Fast Simulation of Nonuniform Substrate Temperature Effects on Global GSI Interconnects

Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate Mosfets

Investigation the Impact of Composition on the Performance of SiGe Nanowire Pmosfets by Different Simulation Methods

Element Edge Based Discretization for TCAD Device Simulation

Extended Hydrodynamic Models and Multigrid Solver of A Silicon Diode Simulation

An HDG Method for the Time-dependent Drift–Diffusion Model of Semiconductor Devices