Abstract:This article presents the construction and analysis of a hybrid numerical method for the discretization of the convection-dominated nonlinear carrier transport process in semiconductor devices. In the construction of the method, the edge streamline upwind (SU) current density model is employed to overcome the nonconvergence brought by the nonlinear property of the current continuity equation, and the mixed finite volume-finite element method (FVFEM) is utilized to effectively extend the edge SU current density model to multidimensional applications. The proposed method is more reliable and flexible than the finite box (FB) method and streamline upwind Petrov–Galerkin (SUPG) method. The performance of several popular SU current density models is compared to find the optimal one. The proposed method is validated by comparing the calculated results with those calculated using commercial software. Based on the streamline upwind-finite volume-finite element method (SU-FVFEM), the finite element method (FEM), and the domain decomposition method (DDM), an in-house parallel computing electrothermal simulator is developed for large-scale semiconductor devices. The performance of the in-house developed parallel simulator is evaluated through simulations of a p-n junction diode and a 3-D bipolar transistor. The results demonstrated that the developed parallel simulator possesses good accuracy, applicability, and scalability.

Quasilinear Formulation with a Simple Remeshing Scheme for the Finite Element Based Simulation of Dopant Diffusion in Silicon

SIMPLE REMESHING SCHEME FOR THE FINITE ELEMENT BASED SIMULATION OF DOPANT DIFFUSION IN SILICON.

Adaptive Meshing Schemes for Simulating Dopant Diffusion

Contour Meshing With a One Dimensional Remeshing Scheme for the Simulation ' of MOS Source / Drain Diffusion

Skeleton-Enhanced Discontinuous Galerkin Method for 3-D Nonlinear Semiconductor Modeling

Parallel Computational Techniques for Simulating Dopant Diffusion in Silicon

SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 3 Edited by G. Baccarani, M. Rudan - Bologna (Italy) September 26-28,1988 - Tecnoprint APPLICATION OF LOCAL N E U M A N N ERROR CRITERIA FOR REMESHING IN DOPANT DIFFUSION PROBLEMS

A Hybrid Streamline Upwind Finite Volume-Finite Element Method for Semiconductor Continuity Equations

Adaptive Local Mesh Refinement for Steady State and Transient Simulation of Semiconductor Devices

Analytical Modeling of Nonlinear Diffusion of Arsenic in Silicon

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

A High-Accuracy Discretization Scheme for Numerical Device Simulations

A discontinuous Galerkin solver for Boltzmann Poisson systems in nano devices

Steady-state Simulation of Semiconductor Devices using Discontinuous Galerkin Methods

Efficient implementation of finite difference schemes for semiconductor device simulations

Analysis of a Finite Element Method for the Drift-Diffusion Semiconductor Device Equations: the Multidimensional Case

A robust hybridizable discontinuous Galerkin scheme with harmonic averaging technique for steady state of real-world semiconductor devices

Simple Positivity Preserving Nonlinear Finite Volume Scheme for Subdiffusion Equations on General Non-conforming Distorted Meshes

Hexahedron-Based Control Volume Finite Element Method for Fully Coupled Nonlinear Drift-Diffusion Transport Equations in Semiconductor Devices

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

A Monotone Finite Volume Scheme for Diffusion Equations on General Non-Conforming Meshes