Abstract:Solving real-world nonlinear semiconductor device problems modeled by the drift-diffusion equations coupled with the Poisson equation (also known as the Poisson-Nernst-Planck equations) necessitates an accurate and efficient numerical scheme which can avoid non-physical oscillations even for problems with extremely sharp doping profiles. In this paper, we propose a flexible and high-order hybridizable discontinuous Galerkin (HDG) scheme with harmonic averaging (HA) technique to tackle these challenges. The proposed HDG-HA scheme combines the robustness of finite volume Scharfetter-Gummel (FVSG) method with the high-order accuracy and $hp$-flexibility offered by the locally conservative HDG scheme. The coupled Poisson equation and two drift-diffusion equations are simultaneously solved by the Newton method. Indicators based on the gradient of net doping $N$ and solution variables are proposed to switch between cells with HA technique and high-order conventional HDG cells, utilizing the flexibility of HDG scheme. Numerical results suggest that the proposed scheme does not exhibit oscillations or convergence issues, even when applied to heavily doped and sharp PN-junctions. Devices with circular junctions and realistic doping profiles are simulated in two dimensions, qualifying this scheme for practical simulation of real-world semiconductor devices.

What problem does this paper attempt to address?

The paper aims to address several key challenges encountered when simulating nonlinear semiconductor devices in practical semiconductor devices. Specifically: 1. **Strong Nonlinear Coupling**: Under actual device operating conditions, the strong coupling between the Poisson equation and the convection-diffusion equation requires solving a coupled nonlinear system of equations, rather than using Gummel-like decoupling and linearization iterative techniques. 2. **Numerical Stability Near Junction Regions**: In the junction structures of semiconductor devices, the net doping concentration exhibits sharp changes within the thin junction layer, leading to high electric fields and rapid gradients in carrier concentration in the depletion region. This makes it difficult for traditional numerical methods to solve the problem stably and robustly. 3. **Local Conservation**: To accurately reconstruct the electric field and current density inside the device and calculate the avalanche generation rate and hot spots, the numerical scheme needs to have local conservation properties. 4. **Realistic Power Device Characteristics**: Practical power semiconductor devices with high doping concentrations (exceeding 10^20 cm^-3), narrow junction layers, and high voltage blocking standards require more robust and efficient algorithms. Traditional algorithms often fail in the face of significant doping transitions. To address these issues, the authors propose a Hybridizable Discontinuous Galerkin (HDG) method combined with Harmonic Averaging (HA) techniques. This method combines the robustness of the Finite Volume Scharfetter-Gummel (FVSG) method with the high-order accuracy and hp flexibility provided by the HDG method. By switching between HA techniques and high-order conventional HDG elements based on indicators of doping concentration gradients and solution variables, the flexibility of the HDG scheme is utilized. Numerical results show that this scheme does not exhibit oscillations or convergence issues when dealing with heavily doped and sharp PN junctions, making it suitable for simulating practical semiconductor devices.

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