Abstract:Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900–1200°C; the normal isothermal e-beam anneals, together with sub-second fast anneals and ‘dual-pulse’ anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature in less than 0.5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model. Defects remaining in diodes fabricated with the forementioned implants after these anneal cycles have been studied using DLTS techniques. Trap densities for the three types of e-beam anneal are comparable to those for furnace annealed diodes, as are the reverse leakage currents measured (typically 2–5nA for a 0.85mm2 diode at −5V).

Parallel Computational Techniques for Simulating Dopant Diffusion in Silicon

Large Scale Numerical Simulation Via Parallelization and Reconfigurable Computing Hardware

Adaptive Meshing Schemes for Simulating Dopant Diffusion

Quasilinear Formulation with a Simple Remeshing Scheme for the Finite Element Based Simulation of Dopant Diffusion in Silicon

An Improved Algorithm for Drift Diffusion Transport and Its Application on Large Scale Parallel Simulation of Resistive Random Access Memory Arrays

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

A Physics-Informed Neural Networks Algorithm for Simulating Semiconductor Devices

SIMPLE REMESHING SCHEME FOR THE FINITE ELEMENT BASED SIMULATION OF DOPANT DIFFUSION IN SILICON.

A 3D Parallel Monte Carlo Simulator for Semiconductor Devices

Three-dimensional numerical semiconductor device simulation: algorithms, architectures, results

Analytical Modeling of Nonlinear Diffusion of Arsenic in Silicon

Parallelized Computational Technique for Signal Propagation Analysis at Very High Speed Differential Transmission Lines

Simulation computation of MPI-based parallel PF-LBM 3-D dendritic growth model

SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 3 Edited by G. Baccarani, M. Rudan - Bologna (Italy) September 26-28,1988 - Tecnoprint APPLICATION OF LOCAL N E U M A N N ERROR CRITERIA FOR REMESHING IN DOPANT DIFFUSION PROBLEMS

Parallel Collision Detection Between Deformable Objects Using SIMD Instructions

Contour Meshing With a One Dimensional Remeshing Scheme for the Simulation ' of MOS Source / Drain Diffusion

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Parallel Circuit Simulation on Multi/Many-core Systems.

Parallel Computing for Lattice Monte Carlo Simulation of Large-Scale Thin Film Growth

The Need for Speed: Efficient Exact Simulation of Silicon Dangling Bond Logic

Experimental characterization of two‐dimensional dopant profiles in silicon using chemical staining