Abstract:In practice, there are three types of adaptive methods using the finite element approach, namely the h-method, p-method, and r-method. In the h-method, the overall method contains two parts, a solution algorithm and a mesh selection algorithm. These two parts are independent of each other in the sense that the change of the PDEs will affect the first part only. However, in some of the existing versions of the r-method (also known as the moving mesh method), these two parts are strongly associated with each other and as a result any change of the PDEs will result in the rewriting of the whole code. In this work, we will propose a moving mesh method which also contains two parts, a solution algorithm and a mesh-redistribution algorithm. Our efforts are to keep the advantages of the r-method (e.g., keep the number of nodes unchanged) and of the h-method (e.g., the two parts in the code are independent). A framework for adaptive meshes based on the Hamilton–Schoen–Yau theory was proposed by Dvinsky. In this work, we will extend Dvinsky's method to provide an efficient solver for the mesh-redistribution algorithm. The key idea is to construct the harmonic map between the physical space and a parameter space by an iteration procedure. Each iteration step is to move the mesh closer to the harmonic map. This procedure is simple and easy to program and also enables us to keep the map harmonic even after long times of numerical integration. The numerical schemes are applied to a number of test problems in two dimensions. It is observed that the mesh-redistribution strategy based on the harmonic maps adapts the mesh extremely well to the solution without producing skew elements for multi-dimensional computations.

Moving Mesh Method for Semiconductor Device Simulations

Skeleton-Enhanced Discontinuous Galerkin Method for 3-D Nonlinear Semiconductor Modeling

Adaptive Local Mesh Refinement for Steady State and Transient Simulation of Semiconductor Devices

Adaptive Mesh Refinement for Heat Transfer Problems in Electronic Devices

Moving mesh adaptation for Si and GaN-based power device simulation

Contour Meshing With a One Dimensional Remeshing Scheme for the Simulation ' of MOS Source / Drain Diffusion

A Hybrid Streamline Upwind Finite Volume-Finite Element Method for Semiconductor Continuity Equations

Moving Mesh Methods in Multiple Dimensions Based on Harmonic Maps

Adaptive Meshing Schemes for Simulating Dopant Diffusion

Quasilinear Formulation with a Simple Remeshing Scheme for the Finite Element Based Simulation of Dopant Diffusion in Silicon

SIMPLE REMESHING SCHEME FOR THE FINITE ELEMENT BASED SIMULATION OF DOPANT DIFFUSION IN SILICON.

A robust hybridizable discontinuous Galerkin scheme with harmonic averaging technique for steady state of real-world semiconductor devices

SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 3 Edited by G. Baccarani, M. Rudan - Bologna (Italy) September 26-28,1988 - Tecnoprint APPLICATION OF LOCAL N E U M A N N ERROR CRITERIA FOR REMESHING IN DOPANT DIFFUSION PROBLEMS

Mesh Simplification Method Based on Monte-Carlo Algorithm

Application of a Meshless Method in Electromagnetics

A Moving Mesh Finite Element Algorithm for Singular Problems in Two and Three Space Dimensions

Hexahedron-Based Control Volume Finite Element Method for Fully Coupled Nonlinear Drift-Diffusion Transport Equations in Semiconductor Devices

Efficient implementation of finite difference schemes for semiconductor device simulations

Moving Mesh Finite Element Methods for the Incompressible Navier-Stokes Equations.

Moving Mesh Method with Variational Multiscale Finite Element Method for Convection–diffusion–reaction Equations

Simulating Semiconductor Charge Transport