Abstract:In this manuscript, carrier transport simulation methods are proposed for devices with the coexistence of quantum transport and diffusive transport by combining the nonequilibrium Green's function method with the drift-diffusion transport simulation method. Current continuity between quantum transport and drift-diffusion transport is ensured by setting quantum transport current as the connection boundary condition of drift-diffusion simulation or by introducing quantum transport-induced carrier generation rates to drift-diffusion simulation. A comprehensive study of our method and the method combining the Wentzel–Kramers–Brillouin (WKB) method with the drift-diffusion transport simulation method is performed for n-type tunnel oxide passivating contact solar cell to investigate their applicable conditions and balance the accuracy and computational cost. As the oxide barrier width, barrier height, and electron effective mass increase, or the doping concentration in the electron transport layer decreases to the extent that the blocking effect of the oxide barrier on light-generated electrons becomes significant, method I is more accurate since the transmission coefficient near the conduction band edge calculated by WKB is overestimated; otherwise, method II is more suitable due to its low computational cost without the loss of accuracy. In addition, the differences between current densities, carrier densities, and Shockley–Read–Hall recombination rates simulated under the two current continuity conditions for the solar cell with different carrier mobilities are also further explored and analyzed.

Solutions to the Convergence Problems in Simulating Wide-bandgap Semiconductor Devices

Skeleton-Enhanced Discontinuous Galerkin Method for 3-D Nonlinear Semiconductor Modeling

Numerical Simulations Of Nonlinear Current-Voltage Characteristics Of Nano-Channels: A Benchmark Study

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Nonlinear Fdtd Solution To The High-Field Conduction Model For Some Solid Dielectrics

Carrier Transport Simulation Methods for Electronic Devices with Coexistence of Quantum Transport and Diffusive Transport

A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology

A Hybrid Streamline Upwind Finite Volume-Finite Element Method for Semiconductor Continuity Equations

A robust hybridizable discontinuous Galerkin scheme with harmonic averaging technique for steady state of real-world semiconductor devices

Parallel Computational Techniques for Simulating Dopant Diffusion in Silicon

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Asymptotic Discussion of the Solutions to the Initial Boundary Value Problem for Semiconductors Drift Diffusion Equations

Efficient Thermal Analysis Method for Large Scale Compound Semiconductor Integrated Circuits Based on Heterojunction Bipolar Transistor

Grid quality and its influence on accuracy and convergence in device simulation

Solving the Asymmetric Doping for Wide-Gap Semiconductors by Host Functionalization: Quantum Engineering Strategy

Analysis of a Finite Element Method for the Drift-Diffusion Semiconductor Device Equations: the Multidimensional Case

A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces

Efficient implementation of finite difference schemes for semiconductor device simulations

Steady-state Simulation of Semiconductor Devices using Discontinuous Galerkin Methods

Projection Finite-Element Methods For Semiconductor-Device Equations

Numerical analysis of heterostructure semiconductor devices