Abstract:This study investigates the electron field emission induced from vertical silicon nanowires (SiNWs) fabricated onto n-type Si(100) and p-type Si(100) substrates using catalyst-induced etching. The impact of dopant (n- and p-type), optical energy gap, and crystallite size on field electron emission(FEE) parameters has been explored in detail. The surface morphology of as-grown SiNWs has been characterized by field emission scanning electron microscopy (FESEM), showing the vertical, well aligned SiNWs. Optical absorption and Raman spectroscopy confirmed the presence of the quantum confinement(QC) effect. The electron field emission performance of the grown nanowires array has been examined through recorded I-V measurements under the Fowler–Nordheim framework. The SiNWs grown onto p-type Si showed a minimum turn-on field, indicating a higher field enhancement factor. The band-bending diagram also suggests a lower barrier height between p- type SiNWs than the n- type SiNWs, thus enhancing the electron field emission performance. These investigations suggest that the dopant (n- and p-type), band gap, and crystallite size influence the field emission parameters, and p-type Si substrates are favorable for electron emission in current saturation.

Current fluctuations of a monocrystalline (100) silicon field emitter

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Field Emission from As Grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon/Silicon Heterojunctions Grown Using A Pulsed Filtered Cathodic Vacuum Arc Technique

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Achieving High-Current Carbon Nanotube Emitters

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Surface Discharge Phenomena of Silicon in Atmospheric Air

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

The dopant (n- and p-type), band gap, and size-dependent field electron emission induced from silicon nanowires

Electron Field Emission of Nanocrystalline Si Prepared by Laser Crystallization

Insight into the Field-Induced Surface Deformation of Si Nanoapex and the Achieving of Highly Reliable Gated Si Nanoemitters

Ultrafast Carrier Dynamics of Aluminum-Doped Silicon Film Irradiated by Femtosecond Laser Pulse

Direct Observation of Sub-Threshold Field Emission from Silicon Nanomembranes

Mechanical and Electrical Properties of the Phosphor‐doped Nano‐silicon Film under an External Electric Field

Sputtering of Spindt-type Field Emission Tip Induced by Electron Stimulated Desorption of Gate Contaminations

Oscillating Current Observed in Field Emission from A Single Zinc Oxide Nanostructure and the Physical Mechanism

Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon

Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

Electron Field Emission from SiC/Si Heterostructures Formed by Carbon Implantation into Silicon and Etching of the Top Silicon Layer

Effects of the Surface Treatment of Silicon Substrate on the Field Emission Characteristic of A Silicon and Amorphous Diamond Cold Cathode Emitter