Sputtering of Spindt-type Field Emission Tip Induced by Electron Stimulated Desorption of Gate Contaminations

Tao Zheng,Bo Zhang,Bruce Gnade

DOI: https://doi.org/10.1109/ivnc.2017.8051536

2017-01-01

Abstract:The sputtering of Mo Spindt emitter due to the gate absorbent are observed when nA level emission current is collected by the gate for a duration of tens of seconds under a vacuum of 1×10 -7 Torr.

What problem does this paper attempt to address?

Fabrication and Characterization of Gated Carbon Nanotube Emitters in A Trench Structure

YF Liao,JC She,H He,SZ Deng,J Chen,NS Xu

DOI: https://doi.org/10.1109/ivnc.2004.1354901

2004-01-01

Abstract:In the present paper, gated CNTs devices were fabricated via processes of (i) predefining a trench with thin SiO2 spacer layer and Cr extractor layer on top to form a fine gated device structure by using traditional ultraviolet light lithography and selective etching techniques; (ii) locally depositing iron (Fe) catalyst on the bottom of the gated structure employing a self-aligned method; (iii) locally growing CNT emitter inside the gated structure by a thermal chemical vapor deposition (CVD) system. Field emission characteristics of the gated CNTs devices were studied in a high vacuum chamber. The corresponding F-N plot of the I-V curve in were calculated and the result showed a linear behavior, demonstrating that the current was generated by field electron emission.
Fabrication of Spindt-Type Nanometer-Sized Chromium Tips for Application As Field-Electron Emitters by Releasing the Stress of the Deposited Thin Film

Jinlun Huang,Yifeng Huang,Miaoxuan Zeng,Ningsheng Xu,Yuan Huang,Jun Chen,Juncong She,Shaozhi Deng

DOI: https://doi.org/10.1021/acsanm.2c04457

IF: 6.14

2022-01-01

ACS Applied Nano Materials

Abstract:Metal cone-shaped nanotip field-electron emitters which are fabricated by directional thin-film deposition (so-called Spindt-type tips) have shown promising potential for application in modern vacuum micro-/nanoelectronics. Although the fabrication processes of Spindt-type tips have been well established, the in situ release of the initial stress in the deposited metal thin film is still an open issue. Herein, an in situ stress-release process was developed to fabricate chromium (Cr) tip arrays. Patterned photoresist microcavities with surrounding trenches were designed. The microcavities were used as templates for forming the metal tips. Trenches were employed for the in situ internal stress release of the Cr film on the top of the resist. The trenches not only separated the deposited Cr film into small-sized slices (square film on the photoresist) for decreasing the deformation but also provided sufficient space for possible deformation. High-aspect-ratio (similar to 2) tips were achieved by plasma etching the Si substrate using the Cr tip as the mask, forming a Cr tip on a Si pillar. The Cr tips maintaining a good tip shape demonstrated that the Cr nanotips possessed good etch resistance to the SF6/O2 plasma. The gated Cr-tip array was fabricated following a self-aligned microfabrication procedure. The fabrication process was compatible with the semiconductor manufacturing technology. The gated devices showed an emission current of 33 mu A at a gate voltage of 137 V. This work provides a well-developed in situ stress-releasing fabrication process to obtain Spindt-type Cr-tip field -electron emitters, which has potential for application in ionization vacuum gauges and neutralizers for propulsion.
In-situ observation of field-induced nano-protrusion growth on a carbon-coated tungsten nanotip

Guodong Meng,Yimeng Li,Roni Aleksi Koitermaa,Veronika Zadin,Yonghong Cheng,Andreas Kyritsakis

2024-03-18

Abstract:Nano-protrusion (NP) on metal surface and its inevitable contamination layer under high electric field is often considered as the primary precursor that leads to vacuum breakdown, which plays an extremely detrimental effect for high energy physics equipment and many other devices. Yet, the NP growth has never been experimentally observed. Here, we conduct field emission (FE) measurements along with in-situ Transmission Electron Microscopy (TEM) imaging of an amorphous-carbon (a-C) coated tungsten nanotip at various nanoscale vacuum gap distances. We find that under certain conditions, the FE current-voltage (I-V) curves switch abruptly into an enhanced-current state, implying the growth of an NP. We then run field emission simulations, demonstrating that the temporary enhanced-current I-V is perfectly consistent with the hypothesis that a NP has grown at the apex of the tip. This hypothesis is also confirmed by the repeatable in-situ observation of such a nano-protrusion and its continued growth during successive FE measurements in TEM. We tentatively attribute this phenomenon to field-induced biased diffusion of surface a-C atoms, after performing a finite element analysis that excludes the alternative possibility of field-induced plastic deformation.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics
Field Emission Properties of a Tungsten Tip after Discharge Treatment

Xiong TAO,Zhaoxiang ZHANG,Mingsheng WANG,Yue WU,Gengmin ZHANG

DOI: https://doi.org/10.3321/j.issn:0479-8023.2006.03.020

2006-01-01

Abstract:A tungsten tip received discharge treatment under a high voltage over 10 kV in a field-emission microscope (FEM). Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observation showed that some nanometer-scale protrusions resulted from the discharge treatment. The post-treatment tungsten tip delivered a field emission current as high as 1.55 mA. The FEM pattern of the tip demonstrated a four-fold symmetry and thus the field emission was attributed to a single protrusion. The dependence of the field emission current on the applied voltage approximately followed the Fowler-Nordheim (F-N) theory. The value of the emission area calculated by the F-N theory is in agreement with that obtained from the TEM observation in the order of magnitude.
Vacuum Breakdown Of Carbon-Nanotube Field Emitters On A Silicon Tip (Vol 83, Pg 2671, 2003)

j c she,n s xu,s z deng,jun chen,h e bishop,s e huq,lun wang,d y zhong,e g wang

DOI: https://doi.org/10.1063/1.1614437

IF: 4

2003-01-01

Applied Physics Letters

Abstract:Findings are given from the experimental observation of the vacuum breakdown of carbon-nanotube (CNT) field emitters on a Si tip. The CNTs were grown on the apex of a Si microtip by microwave plasma-enhanced chemical vapor deposition. The electrical contact of the CNT-Si junction was shown to be of ohmic type. A fine tungsten microprobe in combination with a scanning electron microscopy (SEM) system was employed for both the field emission and the contact conductivity measurements. This arrangement allows to precisely measure the characteristics of individual CNT and to in situ inspect the morphology of the CNT emitters on Si tips before and after vacuum breakdown events. An upper limit in emission current density of similar to10(3) A/m(2) from the CNT emitters was recorded before a vacuum breakdown event is initiated. Clear evidence was found to show that the vacuum breakdown of the CNTs results in melting of the Si tip. These findings enhance the understanding of the failure mechanism of CNT emitters. It also has important technical implication to the development of ultrabright electron source. (C) 2003 American Institute of Physics.
In Situ Observation of Field-Induced Nanoprotrusion Growth on a Carbon-Coated Tungsten Nanotip

Guodong Meng,Yimeng Li,Roni Aleksi Koitermaa,Veronika Zadin,Yonghong Cheng,Andreas Kyritsakis

DOI: https://doi.org/10.1103/physrevlett.132.176201

IF: 8.6

2024-04-24

Physical Review Letters

Abstract:Nanoprotrusion (NP) on metal surface and its inevitable contamination layer under high electric field is often considered as the primary precursor that leads to vacuum breakdown, which plays an extremely detrimental effect for high energy physics equipment and many other devices. Yet, the NP growth has never been experimentally observed. Here, we conduct field emission (FE) measurements along with in situ transmission electron microscopy (TEM) imaging of an amorphous-carbon ( a−C ) coated tungsten nanotip at various nanoscale vacuum gap distances. We find that under certain conditions, the FE current-voltage ( I−V ) curves switch abruptly into an enhanced-current state, implying the growth of an NP. We then run field emission simulations, demonstrating that the temporary enhanced-current I−V is perfectly consistent with the hypothesis that a NP has grown at the apex of the tip. This hypothesis is also confirmed by the repeatable in situ observation of such a nanoprotrusion and its continued growth during successive FE measurements in TEM. We tentatively attribute this phenomenon to field-induced biased diffusion of surface a−C atoms, after performing a finite element analysis that excludes the alternative possibility of field-induced plastic deformation. https://doi.org/10.1103/PhysRevLett.132.176201 © 2024 American Physical Society

physics, multidisciplinary
Experimental Studies on Field Emission Characteristic of Graphite

K Zhao,JC She,SZ Deng,J Chen,NS Xu

DOI: https://doi.org/10.1109/ivmc.2003.1223033

2003-01-01

Abstract:In the present paper, detail experimental studies on field electron emission characteristic of graphite nano-tip were reported. A precursor-free plasma enhanced chemical vapor deposition (PECVD) process was developed for graphite nano-tip arrays growth. N-type <100> Si chips were used as substrates. Scanning electron microscopy (SEM) observation results indicated that the tips were grown vertically on the substrate surface. The tip height and radius are typically /spl sim/100 nm and/spl sim/10 nm, respectively. Further transmission electron microscopy (TEM) image and electron microscopy (TEM) image and electron diffraction pattern demonstrated that the graphite nano-tip is crystalline graphite. The field emission properties of the graphite nano-tip arrays were measured in an ultra-high vacuum (10/sup -8/torr) chamber. A steel anode probe was employed for the testing. The testing results indicated that the graphite nano-tip arrays typically have relatively lower threshold field for field electron emission. Possible growth mechanisms of the graphite nano-tip and the effects of the tip morphology on the field emission properties were discussed.
Mechanism of Non-Saturated Field Electron Emission from Gated P-Type Si Tips

Zhijun Huang,Yifeng Huang,Jun Chen,Ningsheng Xu,Shaozhi Deng,Juncong She

DOI: https://doi.org/10.1109/ivnc.2018.8520279

2018-01-01

Abstract:Gated p-type Si tip arrays with the same gate area (A(G)) but various tip numbers (N-tip) were investigated to clarify the mechanism of non-saturated electron emission. It was found that the N-tip/A(G) ratio determines the current increasing rate (dI/dV(G)) of the non-saturated emission. A surface depletion/inversion dominated electron supply model that considered the local Joule heat effect was proposed to interpret the variation of the increasing rate of the non-saturated current. Less emitter in an array would lead to a higher average current on each tip, and thereby much local Joule heat to induce a stronger non-saturated emission. This work clarifies the mechanism of non-saturated emission from gated p-type emitters, and shows that the current increasing rate can be modified by changing the N-tip/A(G) ratio. The findings are crucial for designing reliable and controllable Si-based electron sources.
Characteristics of Field Emission from Individual Molybdenum Nanotip

He, J.H.,Deng, S.Z.,Liu, F.,Xu, N.S.

DOI: https://doi.org/10.1109/ivesc.2010.5644232

2010-01-01

Abstract:In this paper, individual molybdenum nanotip electrical properties and field emission are studied. Molybdenum nanotips are synthesis on stainless steel substrate by the method of thermal vapor deposition in a chamber with the vacuum of 7 Pa and are characterized by SEM, TEM and EDS.
Thermal instability of molybdenum and silicon tips

Z.X Yu,S.Z Deng,S.S Wu,X.G Zheng,J Chen,N.S Xu

DOI: https://doi.org/10.1016/S0304-3991(99)00059-5

IF: 2.994

1999-01-01

Ultramicroscopy

Abstract:Thermal effects in molybdenum and silicon tips are analyzed with the aim of understanding the initiating mechanism of thermal instability leading to vacuum breakdown. A new theoretical treatment is employed to study the thermal response of tip emitters, which takes into account the correlative effect between field emission and its resultant temperature rise at the apex of tips. The results show that for a typical Si tip, thermal instability would occur before the tip temperature reaches its melting point, while thermal effect is not significant in the case of the Mo tip with the same geometry and dimension of a silicon tip. This remarkable difference between two types of tip is mainly due to their large discrepancies in electrical resistivity, but the Nottingham effect contributes significantly as well. (C) 1999 Elsevier Science B.V. All rights reserved.
In Situ Observation of the Transition Process from Cold to Hot Electron Emission During Field Emission Assisted Vacuum Deposition of Polymer on W Tips

MS Mousa,K Lorenz,NS Xu

DOI: https://doi.org/10.1016/s0304-3991(99)00109-6

IF: 2.994

1999-01-01

Ultramicroscopy

Abstract:Novel experiments were carried out during which it was possible to observe in situ and record the process of transition from cold to hot electron emission. A newly etched tungsten (W) tip was mounted in a system with a base pressure of 3×10−7mbar. In this system, experiments were previously carried out to investigate polymerization of tetracyanoethylene (TCNE) gas on a field cathode metal tip by negative field ion microscopy (NFIM). The process of in situ coating the metallic tips with the carbonic layer in vacuum from the background of the residual TCNE gas during emission might prove to be of crucial importance in terms of technological applications. This produced a more powerful electron source emitting higher currents at much lower applied field. Emitted currents from each coated tip of higher than 50μA was recorded. Even after tip explosion it was always possible to obtain emission again after additional TCNE coating. The duration of ∼6s for transfer of the cold to hot electron emission process was determined from video recording. Few seconds after the switch-on process, the electron emission indicated chemical reactions (e.g. pyrolysis) in the polymer layer which lead to a change of the electric properties of the coating. Thus, chemical aspects have to be considered to explain the hot electron emission mechanism involved.
Effect of Electrode Surface Micro-Protrusions on the Breakdown Time Delay and Jitter for Nanosecond Pulsed Gas Discharge under Hundreds of Kv/cm in Sulfur Hexafluoride

Fan Guo,Yanzhao Xie,Wei Jia,Linshen Xie,Zhiqiang Chen,Weixi Luo,Wei Wu

DOI: https://doi.org/10.1063/5.0005499

IF: 2.2

2020-01-01

Physics of Plasmas

Abstract:For nanosecond pulsed gas discharge under hundreds of kV/cm in sulfur hexafluoride (SF6), the electric field emission (EFE) effect may be the mechanism of the initial electrons. Electrode surface micro-protrusions (ESMPs) generated after discharging, would affect the discharge process under a high electric field. To investigate the effect of ESMPs on the breakdown time delay and jitter, the breakdown characteristics of different electrode materials and surface roughness are determined in this paper. Three types of electrode materials include stainless 304L, EDM-AF5 graphite, and CuW70 W-Cu alloy. The influences of stainless 304L electrodes with surface roughness coefficients of 1.6 and 0.8 on the breakdown delay and jitter are compared. After 700 discharge shots, the morphology characteristics and distributions of ESMPs are observed by a contourgraph. Based on the statistical results of ESMPs and EFE theory, the relationship between the electric field of EFE and ESMPs can be calculated. In addition, the effective electron rates of negative ion detachment (NID) are estimated. The experimental and calculation results indicate that the initial electrons are mainly produced by the EFE effect. When the pressure is below 0.5MPa, the NID effect is limited and the breakdown time delay and jitter are dependent on the height to radius ratio and distributions of ESMPs. Once the pressure exceeds 0.5MPa, the NID effect will be significant and the influence of ESMPs can be neglected.
Current fluctuations of a monocrystalline (100) silicon field emitter

H H Busta,B J Zimmerman,J E Pogemiller

DOI: https://doi.org/10.1088/0960-1317/4/2/003

1994-06-01

Journal of Micromechanics and Microengineering

Abstract:Current fluctuations of a gated, n-type, (100) silicon field emitter were recorded from initial emission, through the forming process, and then cycled between low ( approximately 0.4 mu A) and high ( approximately 10 mu A) currents. After the first excursion from high to low current, the signature of the fluctuations changes from being very noisy to near stable, indicating electron-induced desorption of the surface impurities during the high-current operation. The near-stable condition becomes noisy again over a time period of 100 min at a pressure of 3*10-9 Torr. This indicates re-adsorption of impurities such as oxygen, hydrogen, carbon, and carbon monoxide from the background gas and/or the formation of a new native oxide layer.

engineering, electrical & electronic,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Self-Aligned, Gated Bulk Molybdenum Field Emitter Arrays

Ningli Zhu,Kaisi Xu,YuSheng Zhai,Zhi Tao,Jing Chen

DOI: https://doi.org/10.1109/memsys.2016.7421822

2016-01-01

Abstract:This paper reports the fabrication of bulk molybdenum field emitter arrays with integrated, self-aligned gates. Based on molybdenum deep reactive ion etching, the fabrication process is significantly simplified compared with that of conventional Spindt-type arrays. In the present structures, the distance between the gate and emitter has been precisely controlled by the thickness of SiO2 dielectric layer. In this work, current densities of 8.4mA/cm(2) were produced from a uniform array of 2500 tips covering a total emission area of just 1 mm(2), driven at gate-emitter voltages of just 120 V. Compared to diode-type emitters we reported elsewhere [1], the emission current densities increased by 240 times to 33.6nA/tip, owing to the extractor gates. Further scaling down of the pitch to may lead to an increase of the current densities to several A/cm(2), which is very promising for high-current cathode applications such as X-ray sources.
Field Emission From a MOSFET-Controlled ZnO-Nanowire Cold Cathode

Wenjie Yang,JunCong She,Shaozhi Deng,Ning Xu

DOI: https://doi.org/10.1109/TED.2012.2220548

2012-01-01

Abstract:Field emission from a MOSFET-controlled ZnO nanowire (NW) cathode is reported. The emission current was modulated in four orders of magnitude (from 0.2 nA to 1.15 μA ) by tuning the MOSFET gate voltage from 0.8385 to 1.5255 V. The modulation of the emission current showed an exponential relationship with the MOSFET gate voltage. The MOSFET control can dramatically reduce the emission current fluctuation, i.e., from 61.4% to 3.2%, at a current level of ~ 650 nA. The related mechanisms responsible for the improvement on field-emission current stability, the correlation between the vacuum breakdown of the NWs, and the failure of the MOSFET were discussed. The technique combines cold-cathode nanomaterials with mature solid-state technology to produce a reliable cathode in an on-chip form, which shows promising potential for modern vacuum micro-/nanosized electronic device applications.
Emission of charged particles from laser-induced germanium ecton, vacuum spark and vacuum arc

Vitali Porshyn

DOI: https://doi.org/10.48550/arXiv.2008.01872

2020-08-04

Plasma Physics

Abstract:The highly resolved temporal evolution of laser-induced micro-explosions on a germanium surface is studied in a triode configuration for various gate charge levels and cathode currents. Electron emission from individual spots is directly imaged with a luminescence screen, showing that the opening angle of the source is about 30$^\circ$. Electron bunches of several nanocoulombs per pulse in a time interval of about 150 ns are directly extracted to the anode without vacuum breakdown in the cathodic gap. When breakdown occurs, a remarkable change in the arc behavior of a threshold gap potential of around 1 kV is observed, which hints at two different evaporation mechanisms that depend on the cathodic fall of an individual spot. Therefore, for voltages well above the threshold, a fast gate discharge is observed within the first 100-200 ns, followed by fundamental plasma oscillations and an electron emission of several $\mu$C per pulse from the plasma boundary. Additionally, highly efficient emission of germanium ion clusters occurs, evidencing a stable two-fold electron multiplication in the plasma, with a charge of several $\mu$C per pulse below the threshold.
Self-modulated Field Electron Emitter: Gated Device of Integrated Si Tip-on-nano-channel

Zhijun Huang,Yifeng Huang,Zhangxu Pan,Juncong She,Shaozhi Deng,Jun Chen,Ningsheng Xu

DOI: https://doi.org/10.1063/1.4971336

IF: 4

2016-01-01

Applied Physics Letters

Abstract:We report the featured gated field electron emission devices of Si nano-tips with individually integrated Si nano-channels and the interpretation of the related physics. A rational procedure was developed to fabricate the uniform integrated devices. The electrical and thermal conduction tests demonstrated that the Si nano-channel can limit both the current and heat flows. The integrated devices showed the specialties of self-enhancement and self-regulation. The heat resistance results in the heat accumulation at the tip-apex, inducing the thermally enhanced field electron emission. The self-regulated effect of the electrical resistance is benefit for impeding the current overloading and prevents the emitters from a catastrophic breakdown. The nano-channel-integrated Si nano-tip array exhibited emission current density up to 24.9 mA/cm2 at a gate voltage of 94 V, much higher than that of the Si nano-tip array without an integrated nano-channel.
Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors

Filippo Giubileo,Laura Iemmo,Maurizio Passacantando,Francesca Urban,Giuseppe Luongo,Lingfeng Sun,Giampiero Amato,Emanuele Enrico,Antonio Di Bartolomeo

DOI: https://doi.org/10.1021/acs.jpcc.8b09089

2018-08-03

Abstract:Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapped in the SiO2 gate oxide, during the irradiation. The transistor channel current is increased up to three order of magnitudes after the exposure to an irradiation dose of 100e-/nm2. Finally, a complete field emission characterization of the MoS2 flake, achieving emission stability for several hours and a minimum turn-on field of about 20 V/um with a field enhancement factor of about 500 at anode-cathode distance of 1.5um, demonstrates the suitability of few-layer MoS2 as two-dimensional emitting surface for cold-cathode applications.

Applied Physics,Mesoscale and Nanoscale Physics
Electron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors

Qi Zhang,Junjie Qi,Yunhua Huang,Xin Li,Yue Zhang

DOI: https://doi.org/10.1049/mnl.2011.0229

2011-01-01

Micro & Nano Letters

Abstract:The authors investigated the performance of ZnO nanowire-based metal-semiconductor field effect transistors (MESFETs) by focusing electron beam on the Schottky gate. The MESFET was fabricated by employing Tantalum as drain and source and by using Schottky barrier at tungsten-ZnO interface as the gate. As to IDS against VGS curves, once the gate was illuminated with electron beam radiation, crests ...
Gate Damage Mechanism of Schottky-Type P-Gan Gate HEMTs in Reverse Conduction Mode under Surge Current Stress

Xiaoming Wang,Ruize Sun,Yun Xia,Chao Liu,Xinghuan Chen,Wanjun Chen,Bo Zhang

DOI: https://doi.org/10.1109/ispsd59661.2024.10579628

2024-01-01

Abstract:In this paper, the gate damage mechanism of Schottky-type p-GaN gate high electron mobility transistors (HEMTs) in reverse conduction mode under surge current stress is investigated. Single and repetitive stress experiments and mix-mode simulations are carried out. For the device subjected to the surge current exceeding the rated current, the gate-to-channel voltage is very high due to the self-heating effect. It will cause significant thermally-assisted tunneling of holes at the gate Schottky junction. Under a single stress with an extremely high current, the Schottky junction breakdown will occur, leading to the subsequent device burnout. Under the repetitive stress below the single failure current, new donor traps can be generated in the p-GaN layer, causing irreversible gate degradation. It is confirmed by C G -V G characteristics and recovery experiments.

Sputtering of Spindt-type Field Emission Tip Induced by Electron Stimulated Desorption of Gate Contaminations

Fabrication and Characterization of Gated Carbon Nanotube Emitters in A Trench Structure

Fabrication of Spindt-Type Nanometer-Sized Chromium Tips for Application As Field-Electron Emitters by Releasing the Stress of the Deposited Thin Film

In-situ observation of field-induced nano-protrusion growth on a carbon-coated tungsten nanotip

Field Emission Properties of a Tungsten Tip after Discharge Treatment

Vacuum Breakdown Of Carbon-Nanotube Field Emitters On A Silicon Tip (Vol 83, Pg 2671, 2003)

In Situ Observation of Field-Induced Nanoprotrusion Growth on a Carbon-Coated Tungsten Nanotip

Experimental Studies on Field Emission Characteristic of Graphite

Mechanism of Non-Saturated Field Electron Emission from Gated P-Type Si Tips

Characteristics of Field Emission from Individual Molybdenum Nanotip

Thermal instability of molybdenum and silicon tips

In Situ Observation of the Transition Process from Cold to Hot Electron Emission During Field Emission Assisted Vacuum Deposition of Polymer on W Tips

Effect of Electrode Surface Micro-Protrusions on the Breakdown Time Delay and Jitter for Nanosecond Pulsed Gas Discharge under Hundreds of Kv/cm in Sulfur Hexafluoride

Current fluctuations of a monocrystalline (100) silicon field emitter

Self-Aligned, Gated Bulk Molybdenum Field Emitter Arrays

Field Emission From a MOSFET-Controlled ZnO-Nanowire Cold Cathode

Emission of charged particles from laser-induced germanium ecton, vacuum spark and vacuum arc

Self-modulated Field Electron Emitter: Gated Device of Integrated Si Tip-on-nano-channel

Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors

Electron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors

Gate Damage Mechanism of Schottky-Type P-Gan Gate HEMTs in Reverse Conduction Mode under Surge Current Stress