Influence of Protection Layers on Thermal Stability of Nitride Thin Films

Andriy Zakutayev,Craig L. Perkins
DOI: https://doi.org/10.1002/pssr.202100178
2021-06-26
Abstract:<p>Nitrides are commonly studied for their properties relevant to numerous coating applications, and have been recently used to synthesize newly predicted materials in thin film form. However, thermodynamic stability of such nitride materials is difficult to experimentally evaluate, due to limited thermal budget of thin films. Here we show that thermal stability of nitride films can be extended using protection layers. Specifically, we find that zirconium nitride (ZrN) thin films are stable up to at least 1200°C annealing temperature in N<sub>2</sub> atmosphere, if aluminum nitride (AlN) diffusion barriers and capping layers are used. X‐ray diffraction (XRD) measurements show the expected thermodynamically stable rocksalt structure of ZrN, and scanning electron microscopy (SEM) confirms compact microstructure of these ZrN films. Without such protection layers, transient bixbyite Zr<sub>2</sub>ON<sub>2</sub> phase and high‐temperature ZrSi<sub>2</sub> phase are observed after annealing by XRD, SEM, and auger electron spectroscopy (AES), due to side reaction with native surface oxide (ZrO<sub>x</sub>) and substrate (Si) respectively. These results demonstrate that protection layers are beneficial to increase the thermal budget of nitride thin films, for evaluating thermodynamic stability of new nitride materials, for capturing transient metastable phases during crystallization, and for using functional nitride coatings in extreme environments.</p><p>This article is protected by copyright. All rights reserved.</p>
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