Abstract:This study presents a novel approach to stabilizing oxidation‐prone nitride semiconductors. By depositing a thin amorphous GaN layer on Zn3N2, it is demonstrated that the typically fast‐oxidizing Zn3N2 resists oxidation and maintains stability for over 3 years in ambient conditions. This method provides a robust solution for stabilizing Zn3N2, facilitating its application in high‐performance electronic devices and energy conversion systems. Zinc nitride (Zn3N2) is a promising semiconductor for a range of optoelectronic and energy conversion applications, offering a direct bandgap of 1.0 eV, large carrier mobilities, and abundant constituent elements. However, the material is prone to bulk oxidation in ambient environments, which has thus far impeded its practical deployment. While previous approaches have focused on stabilizing the material via integration of ZnO surface layers, these strategies introduce additional challenges regarding elevated processing temperatures and limited control of interface properties. In this study, it is shown that amorphous GaN thin films can serve as highly stable protection layers on Zn3N2 surfaces and can be deposited at the same growth temperature and in the same deposition system as the underlying semiconductor. The GaN‐capped Zn3N2 structures exhibit long‐term stability, surviving over 3 years of exposure to ambient conditions with no discernible alterations in composition, structure, or electrical properties. Notably, the amorphous GaN coatings can even impede Zn3N2 oxidation under prolonged aqueous exposure. Thus, this study offers a solution to stabilize Zn3N2 in ambient conditions, providing a viable pathway to its utilization in robust and high‐performance electronic devices, such as thin film transistors and solar energy conversion systems.

Ultrastable Zn3N2 Thin Films via Integration of Amorphous GaN Protection Layers

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Influence of Protection Layers on Thermal Stability of Nitride Thin Films

Aluminum Oxide at the Monolayer Limit via Oxidant-free Plasma-Assisted Atomic Layer Deposition on GaN

Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

High mobility and high stability glassy metal-oxynitride materials and devices

Suppression of Ald-Induced Degradation of Ge Mos Interface Properties by Low Power Plasma Nitridation of Geo2

In Situ Nafion-nanofilm Oriented (002) Zn Electrodeposition for Long-Term Zinc-Ion Batteries.

Lattice-aligned gallium oxynitride nanolayer for GaN surface enhancement and function extension

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Multicomponent Oxynitride Thin Films: Precise Growth Control and Excited State Dynamics

MOCVD Growth of ZrN Thin Films on GaN/Si Templates and the Effect of Substrate Temperature on Growth Mode, Stress State, and Electrical Properties

Electrical and Structural Analysis of β‐Ga2O3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer

Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation

High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N++GaN

P-19: Dual Active Layer Structure of Nitrogen Doped Amorphous InSnZnO Thin-Film Transistors for Negative Gate Bias Stability Improvement

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors with a Tandem Structure for High-Mobility and Reliable Operations

P‐18: Nitrogen‐Doped Amorphous InGaZnO Thin Film Transistors Capped with Molybdenum‐Doped ZnO Ultraviolet‐Shield Layers

Improved Thermal Stability and Oxygen‐Barrier Performance of SiO2 Thin Films by Modifying Amorphous Network Structure

Effects of Interface Oxidation on the Transport Behavior of the Two-Dimensional-electron-gas in AlGaN/GaN Heterostructures by Plasma-Enhanced-atomic-layer-deposited AlN Passivation

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT