Abstract:Carbon nanotubes (CNT) are known to be materials with potential for manufacturing sub-20 nm high aspect ratio vertical interconnects in future microchips. In order to be successful with respect to contending against established tungsten or copper based interconnects, though, CNT must fulfil their promise of also providing low electrical resistance in integrated structures using scalable integration processes fully compatible with silicon technology. Hence, carefully engineered growth and integration solutions are required before we can fully exploit their potentialities. This work tackles the problem of optimizing a CNT integration process from the electrical perspective. The technique of measuring the CNT resistance as a function of the CNT length is here extended to CNT integrated in vertical contacts. This allows extracting the linear resistivity and the contact resistance of the CNT, two parameters to our knowledge never reported separately for vertical CNT contacts and which are of utmost importance, as they respectively measure the quality of the CNT and that of their metal contacts. The technique proposed allows electrically distinguishing the impact of each processing step individually on the CNT resistivity and the CNT contact resistance. Hence it constitutes a powerful technique for optimizing the process and developing CNT contacts of superior quality. This can be of relevant technological importance not only for interconnects but also for all those applications that rely on the electrical properties of CNT grown with a catalytic chemical vapor deposition method at low temperature.

A self-assembled synthesis of carbon nanotubes for interconnects

Transferable thin films of pristine carbon nanotubes.

Uniform Patterned Synthesis of Vertically-Aligned Carbon Nanotubes on Low-Stress Micromechanical Structures

Integrating Vertically Aligned Carbon Nanotubes on Micromechanical Structures

Self-aligned Electrodes for Suspended Carbon Nanotube Structures

Fabrication and Electrical and Mechanical Properties of Carbon Nanotube Interconnections

Self-Aligned Growth of Single-Walled Carbon Nanotube Bridging Two Electrodes

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Cnx/Carbon Nanotube Junctions Synthesized by Microwave Chemical Vapor Deposition

Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts

Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects

Acoustic-assisted assembly of an individual monochromatic ultralong carbon nanotube for high on-current transistors.

Patterning and growth of carbon nanotubes on a highly structured 3D substrate surface

Growing Highly Pure Semiconducting Carbon Nanotubes by Electrotwisting the Helicity

Fast and Controlled Integration of Carbon Nanotubes into Microstructures

Fabrication and electrical integration of robust carbon nanotube micropillars by self-directed elastocapillary densification

Multilevel, Multicomponent Microarchitectures of Vertically-Aligned Carbon Nanotubes for Diverse Applications

Building and testing organized architectures of carbon nanotubes

Selective Growth of Carbon Nanotube on Silicon Substrates

Carbon Nanotubes for Interconnect Applications

Explorations on growth mechanism, controlled synthesis and applications of carbon nanotubes