Abstract:High density and high semiconducting-purity single-walled carbon nanotube array (A-CNT) have recently been demonstrated as promising candidates for high-performance nanoelectronics. Knowledge of the structures and arrangement of CNTs within the arrays and their interfaces to neighboring CNTs, metal contacts, and dielectrics, as the key components of an A-CNT field effect transistor (FET), is essential for device mechanistic understanding and further optimization, particularly considering that the current technologies for the fabrication of A-CNT wafers are mainly laboratory-level solution-based processes. Here, we conduct a systematic investigation into the microstructures of A-CNT FETs mainly via cross-sectional high-resolution transmission electron microscopy and tentatively establish a framework consisting of up to 11 parameters which can be used for structure-side quality evaluation of the A-CNT FETs. The parameter ensemble includes the diameter, length (or terminal), and density distribution of CNTs, radial deformation of CNTs, array alignment defects, surface crystallography facets of contact metal, thickness distribution of high-k dielectrics (HfO2), and the contact ratios for the CNT-CNT, CNT-metal, CNT-dielectric, and CNT-substrate interfaces. Enriched array alignment defects, i.e., bundle, stacking, misorientation, and voids, are observed with a total ratio sometimes up to ∼90% in pristine A-CNTs and even up to ∼95% after the device fabrication process. Thus, they are suggested as the prevalent performance-limiting factors for A-CNT FETs. Complex interfacial structures are observed at the CNT-CNT, CNT-metal contact, and CNT-high-k dielectric interfaces, making the local environment and the property of each component CNT involved in an A-CNT FET distinct from others in terms of the diameters, radial deformation, and interactions with the local surroundings (mainly through van der Waals interactions). The present study suggests further improvements on the fabrication technology of A-CNT wafers and devices and mechanistic investigations into the impacts of complex array alignment defects and interface structures on the electrical performance of A-CNT FETs as well.

Acoustic-assisted assembly of an individual monochromatic ultralong carbon nanotube for high on-current transistors.

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Carbon Nanotube Materials for Future Integrated Circuit Applications

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors.

Rate-selected Growth of Ultrapure Semiconducting Carbon Nanotube Arrays

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

Nonideality in Arrayed Carbon Nanotube Field Effect Transistors Revealed by High-Resolution Transmission Electron Microscopy

Monochromatic Carbon Nanotube Tangles Grown by Microfluidic Switching between Chaos and Fractals

Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts

Multilevel, Multicomponent Microarchitectures of Vertically-Aligned Carbon Nanotubes for Diverse Applications

Short Channel Carbon Nanotube Thin Film Transistors with High On/off Ratio Fabricated by Two-Step Fringing Field Dielectrophoresis

Single-Carbon-Nanotube Manipulations and Devices Based on Macroscale Anthracene Flakes

DNA-directed nanofabrication of high-performance carbon nanotube field-effect transistors

Wafer Scale Fabrication Of Carbon Nanotube Thin Film Transistors With High Yield

Carbon Nanotubes: from Growth, Placement and Assembly Control to 60mv/decade and Sub-60 Mv/decade Tunnel Transistors

Facile manipulation of individual carbon nanotubes assisted by inorganic nanoparticles.

High‐Purity Monochiral Carbon Nanotubes with a 1.2 Nm Diameter for High‐Performance Field‐Effect Transistors

A self-assembled synthesis of carbon nanotubes for interconnects

High-throughput optical imaging and spectroscopy of individual carbon nanotubes in devices