Abstract:High-efficiency silicon solar cells rely on some form of passivating contact structure to reduce recombination losses at the crystalline silicon surface and losses at the metal/Si contact interface. One such structure is polycrystalline silicon (poly-Si) on oxide, where heavily doped poly-Si is deposited on a SiOx layer grown directly on the crystalline silicon (c-Si) wafer. Depending on the thickness of the SiOx layer, the charge carriers can cross this layer by tunneling (<2 nm SiOx thickness) or by direct conduction through disruptions in the SiOx, often referred to as pinholes, in thicker SiOx layers (>2 nm). In this work, we study structures with tunneling- or pinhole-like SiOx contacts grown on pyramidally textured c-Si wafers and expose variations in the SiOx layer properties related to surface morphology using electron-beam-induced current (EBIC) imaging. Using EBIC, we identify and mark regions with potential pinholes in the SiOx layer. We further perform high-resolution transmission electron microscopy on the same areas, thus allowing us to directly correlate locally enhanced carrier collection with variations in the structure of the SiOx layer. Our results show that the pinholes in the SiOx layer preferentially form in different locations based on the annealing conditions used to form the device. With greater understanding of these processes and by controlling the surface texture geometry, there is potential to control the size and spatial distribution of oxide disruptions in silicon solar cells with poly-Si on oxide-type contacts; usually, this is a random phenomenon on polished or planar surfaces. Such control will enable us to consistently produce high-efficiency devices with low recombination currents and low junction resistances using this contact structure.

Influence of Polysilicon Thickness on Properties of Screen‐Printed Silver Paste Metallized Silicon Oxide/Polysilicon Passivated Contacts

Influence of Silicon Substrate Surface Finish on the Screen‐Printed Silver Metallization of Polysilicon‐Based Passivating Contacts

Investigation of Contact Resistivities on APCVD (p) Poly-Si for Fired Passivating Contacts

Effects on Metallization of n+-Poly-Si Layer for N-Type Tunnel Oxide Passivated Contact Solar Cells

INFLUENCE OF SILVER PASTE COMPOSITION ON OF SCREEN-PRINTED OHMIC CONTACTS SILICON SOLAR CELLS

N-type polysilicon passivating contacts using ultra-thin PECVD silicon oxynitrides as the interfacial layer

Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

Temperature-induced stoichiometric changes in thermally grown interfacial oxide in tunnel-oxide passivating contacts

Influence of Polarized Bias and Porous Silicon Morphology on the Electrical Behavior of Au-porous Silicon Contacts

Effect of Surface Texture on Pinhole Formation in SiO x-Based Passivated Contacts for High-Performance Silicon Solar Cells

Poly-Si passivating contacts prepared via phosphorus spin-on-doping: A comparison between different silicon deposition methods

Progress in screen-printed metallization of industrial solar cells with SiOx/poly-Si passivating contacts

Role of polysilicon in poly-Si/SiOx passivating contacts for high-efficiency silicon solar cells

Charge carrier transport mechanism through different oxides for (n) poly‐Si/SiOx fired passivating contacts

The influence of Bi2O3 glass powder in silver paste on the fabrication of ohmic contacts and its potential effectiveness in solar cells and integrated circuits on p-type silicon substrates

Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact

Model for contact formation of novel TeO2 containing Pb-free silver paste on n+ and p+ doped crystalline silicon

On the passivation mechanism of poly-silicon and thin silicon oxide on crystal silicon wafers

Insight of Effect of Silver Powders on Silver‐silicon Contacts of Crystalline Silicon Solar Cells through Analysis of Glass Structural Decay

Effects of PECVD preparation conditions and microstructures of boron-doped polysilicon films on surface passivation of p-type tunnel oxide passivated contacts