Abstract:The aim of the present paper is to review our work on plasma‐surface interactions during the etching of silicon gates in low pressure high density HBr/Cl2/O2 based plasmas. In integrated circuit manufacturing, the transfer of patterns onto the polysilicon layer relies on the formation of a passivation layer on sidewalls of the etched features, which protects the silicon gate sidewall fromisotropic etching. At the same time, a layer with an almost identical chemical composition is also deposited on the reactor walls and can modify the process parameters by changing the radicals' surface loss probability. In this work we use a new “plasma etching‐sputtering” diagnostic technique, involving a subsequent “mild etching” of the layer deposited on the chamber walls by a few % SF6‐containing Ar plasma. Thus we investigate the chemical composition of this layer. This chemical composition is deduced from the time variation of the gas phase concentration of different atoms and radicals, the etch products of the wall deposited layer, monitored during the “mild etching” of the layer by time‐resolved optical emission spectroscopy and mass spectrometry. Optical absorption spectroscopy and mass spectrometry have been employed to characterize the HBr/Cl2/O2 plasma, currently used for the gate etching, and to estimate the absolute flux of neutral and ionic deposition precursors reaching the reactor walls. It comes out that the silicon wafer etch byproducts, SiClx radicals (x < 2) and SiOyCl+x ions, are the main depositing agents. Finally, the chemical topography analysis method, based on the X‐ray photoelectron spectroscopy, has been used to determine the chemical composition of the layer formed on the sidewalls of the silicon etched features. We show that the layers deposited on the sidewalls and on the chamber walls are both silicon oxyhalogenides (SiOyClx) compounds, formed by the subsequent oxidation of the deposited silicon chloride etching by‐products. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing

Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Molecular dynamics simulation of silicon oxidation enhanced by energetic hydrogen ion irradiation

Correlation and Interaction between Sidewall Passivation and Chamber Walls Deposition During Silicon Gate Etching

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

Passivating and low damaging plasma etching of GaN using Cl 2 and SiCl 4 for recessed gate MOSc-HEMT devices

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl2/O2 plasmas

Micro-trench free 4H-SiC etching with improved SiC/SiO2 selectivity using inductively coupled SF6/O2/Ar plasma

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

20 Nm Polysilicon Gate Patterning and Application in 36 Nm Complementary Metal–oxide–semiconductor Devices

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size

Dry Etch Damage in N-Type Crystalline Silicon Wafers Assessed by Deep-Level Transient Spectroscopy and Minority Carrier Lifetime

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide

Measurement of Plasma Etch-Induced Damage to Silicon Beneath Si0 2 Layer: Effective Range of Plasma Etch Damage Through Si0 2

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns