Structural and Electrical Characterization of Highly Tetrahedral-Coordinated Diamond-Like Carbon Films Grown by Pulsed-Laser Deposition

M. P. Siegal,T. A. Friedmann,S. R. Kurtz,D. R. Tallant,R. L. Simpson,F. Dominguez,K. F. McCarty
DOI: https://doi.org/10.1557/proc-349-507
1994-01-01
MRS Proceedings
Abstract:ABSTRACT Highly tetrahedral-coordinated-amorphous-carbon (a-tC) films deposited by pulsed-laser deposition (PLD) on silicon substrates are studied. These films are grown at room-temperatures in a high-vacuum ambient. a-tC films grown in this manner have demonstrated stability to temperatures in excess of T = 1000°C, more than sufficient for any post-processing treatment or application. Film surfaces are optically smooth as determined both visually and by atomic-force microscopy. PLD growth parameters can be controlled to produce films with a range of sp 2 - sp 3 carbon-carbon bond ratios. Films with the highest yield of sp 3 C-C bonds have high resistivity, with a dielectric permittivity constant s σ 4, measured capacitively at low frequencies (1 – 100 kHz). These a-tC films are p-type semiconductors as grown. Schottky barrier diode structures have been fabricated.
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