Electronic-Properties of Semiconducting Diamond-Like Carbon Diamond

KK CHAN,SRP SILVA,GAJ AMARATUNGA
DOI: https://doi.org/10.1016/0040-6090(92)90526-h
IF: 2.1
1992-01-01
Thin Solid Films
Abstract:Semiconducting diamond-like carbon-diamond (DLC-diamond) films were deposited by r.f. plasma-enhanced chemical vapour deposition (PECVD) at room temperature. The source gas was a mixture of methane and argon and the substrates used were n type {100} silicon. The films are found to be semiconducting with a variable band gap from 1.2 to 4.0 eV which can be controlled by changing the deposition conditions. Rectifying DLC-carbon/silicon heterojunction diodes were fabricated. The undoped films are intrinsically p type with a deep acceptor level at about 0.34 eV from the top of the valence band. A typical resistivity is of the order of 106−108 ohm cm with a breakdown strength of 10 MV cm−1.The built-in potential at the DLC-diamond-silicon junction is 0.49 V. The photoresponse of the heterojunction diode was also characterized. Some preliminary results which show that DLC-diamond has potential as a band gap modulated multilayer material are also presented.
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