Abstract:The arrival of the post-Moore era has become a consensus, and heterogeneous integration technology has become an important technical route for the development of integrated circuits. Heterogeneous integration usually uses a substrate (in many cases, it’s a silicon interposer) to realize the power supply and interconnection between components. As demands for performance and interconnect density continue to increase, decoupling capacitors must be used on interposers to tackle growing EMI issues. Silicon capacitor technology, especially deep trench capacitor (DTC) technology, is well suited for silicon interposer based integration due to advantages of small profile and CMOS process compatibility, etc. However, existing DTC devices still cannot meet the needs of high-performance and high-frequency applications, and there is still a lot of space for improvement in terms of increasing capacitance density and reducing ESR and ESL.In this paper, several DTC technologies are compared, and on the basis of comparative analysis, some effective optimization ideas are summarized. Under the same process conditions, the shape design of the capacitor device can significantly affect the device performance. Therefore, based on the densest-packing principle, a novel deep trench capacitor device with hexagonal design is proposed. Furthermore, a quantitative index to estimate capacitance density of DTC devices with different shape design is set up for design.Finally, the width of trenches is 1μm, and the depth is 15μm. The material of the electrode layer and the dielectric layer is titanium nitride (TiN) and hafnium oxide (HfO2), respectively. The simulation results show that the novel design achieves a capacitance density of up to 1200nF/mm 2 . Under the specific simulation condition, where the equivalent capacitance is around 5nF, ESL is reduced to 5.76pH@10GHz, and ESR is 1.01 ohm. It is worth mentioning that the impedance of the device itself remains stable at about 1 ohm in a fairly wide frequency band from 100MHz to 10GHz. Scaling and applying more advanced manufacturing processes can lead to higher capacitance density and better electrical performance.

Three-dimensional PN junction capacitor for passive integration

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Three-dimensional circuit integration based on self-synchronized RF-interconnect using capacitive coupling

Design and Simulation of Deep Trench Capacitor on High-Performance Silicon Interposer

Capacitance Extraction of Three-Dimensional Interconnects Using Element-By-Element Finite Element Method (Ebe-Fem) and Preconditioned Conjugate Gradient (pcg) Technique

Design, Fabrication and Characterization of TSV Interposer Integrated 3D Capacitor for SIP Applications

Pristine PN junction toward atomic layer devices

A high-performance trench capacitor integrated in a passive integration technology

Monolithic Integration of All‐in‐One Supercapacitor for 3D Electronics

Dielectric Quality of 3D Capacitor Embedded in Through-Silicon Via (TSV)

The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

Accelerating Ion Diffusion With Unique Three-Dimensionally Interconnected Nanopores For Self-Membrane High-Performance Pseudocapacitors

Three-dimensional AlZnO/Al 2 O 3 /alzno Nanocapacitor Arrays on Si Substrate for Energy Storage

Fabrication and Characterization of a Low Parasitic Capacitance and Low-Stress Si Interposer for 2.5-D Integration

Enhancing the specific capacitance of a porous silicon-based capacitor by embedding graphene combined with three-dimensional electrochemical etching

Dielectric capacitors with three-dimensional nanoscale interdigital electrodes for energy storage

Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET

Electrical Characterization of Integrated Passive Devices Using Thin Film Technology for 3D Integration

Fabrication and characterization of quasi-three-dimensional capacitor structure based on carbon nanowalls

Sensing Characteristic Enhancement of CMOS-Based ISFETs With Three-Dimensional Extended- Gate Architecture

Wafer-Level 3D Integration Based on Poly (Diallyl Phthalate) Adhesive Bonding