Abstract:Latest portable or consumer electronic devices have driven packaging technology and industry towards the direction of 3D IC for vertical interconnection between homogenous or heterogeneous chips integration based on diverse applications. Since 3D IC packaging certainly possesses several obstacles and challenges during research & development, foundries and Outsourced Semiconductor Assembly and Test (OSAT) have focused on a much simplified approach known as 2.5D IC packaging, which utilizes technology called Through Silicon Via (TSV) and well-designed Re-Distribution Layer (RDL) to achieve electrical interconnection. 2.5D IC packaging not only provides us with the advantages of smaller package dimension and greater electrical performance, but considerably reduces numerous challenges which 3D IC packaging may incline to generate. SPIL has participated in the vast domain of 3D IC packaging since early 2012 by establishing our in-house 2.5D IC packaging capability. We have developed corresponding technologies for traditional Chip-on-Chip (CoC) platform and moved on to latest Chip-on-Wafer (CoW) or Chip-to-Wafer (CtW) platform combining Through Silicon Interposer (TSI) with Backside Via Reveal (BVR) and RDL process. Last year, we proposed several actions for the fabrication process challenges which we have encountered during 2.5D IC packaging development, including warpage alleviation for interposer, passivation film thickness tuning, and passivation film interface delamination prevention [1]. In the latter half of 2014, extensive studies and works have been focused on warpage alleviation for interposer, which consisted of further investigation about passivation film composition, material stress behavior, film thickness, film uniformity, and so forth. It was expected that a much robust correlation or model can be derived and acquired to help us estimate warpage performance at different process stages, assisting us in determining the influences of thermal process and material stress distribution. In this paper, we have expanded the estimation model from one-layer passivation film tuning to dual-layer passivation film tuning using composite passivation materials including Silicon Dioxide (SiO2), Silicon Nitride (SiNx), and various types of stress-altered SiNx with different stress behavior. The mutual relationship and effects of passivation film stress behavior, film thickness, dual-layer configuration, and corresponding thermal influences were both investigated and addressed. This estimation model can be further expanded and fitted into a multi-level passivation film structure if required, and it was proven to be effective for predicting diverse interposer designs and structures from design houses much efficiently. It was anticipated that the estimation model with robust theoretical basis and explicit analysis can be utilized for contributing to solving 2.5D IC packaging warpage Issues and lowering the gap for moving on to 3D IC packaging development in swifter advancement.

Fabrication and Characterization of a Low Parasitic Capacitance and Low-Stress Si Interposer for 2.5-D Integration

Fabrication and Characterization of Low Stress Si Interposer with Air-Gapped Si Interconnection for Hermetical System-in-Package

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

Design, Fabrication and Stress Evaluation of Si Electrical Interconnection Air-gapped from Si Interposer

Fabrication and RF Property Evaluation of High-Resistivity Si Interposer for 2.5-D/3-D Heterogeneous Integration of RF Devices

Process Development of Thick Si Interposer for 2.5d Integration of Rf Mems Devices

Fabrication Challenges and Test Structures for High-Aspect-ratio SOI MEMS Devices with Refilled Electrical Isolation Trenches

Development of high performance 2.5D packaging using glass interposer with through glass vias

Design, Fabrication and Characterization of TSV Interposer Integrated 3D Capacitor for SIP Applications

Silicon Interposer warpage estimation model for 2.5D IC packaging utilizing passivation film composition and stress tuning

Electrical Simulation and Analysis of Si Interposer for 3d Ic Integration

Design and Fabrication of a Test Chip for 3D Integration Process Evaluation

Implementation of Silicon-on-glass MEMS Devices with Embedded Through-Wafer Silicon Vias Using the Glass Reflow Process for Wafer-Level Packaging and 3D Chip Integration

Design, Fabrication, and Property Measurement of a Zero-Insertion-force (ZIF) MEMS Connector

Glass-on-Silicon Interposer with High Heat Dissipation Capacity and Excellent RF Compatibility

Layout Dependence Stress Investigation in through Glass via Interposer Architecture Using a Submodeling Simulation Technique and a Factorial Design Approach

Wafer-Area-Saving Test Structures and Measurement Method for the Characterization of Interconnect Resistance and Capacitance in Nanometer Technologies

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Design and Characterization of Petaloid Hollow Cu Interconnection for Interposer

Research on a 3D Encapsulation Technique for Capacitive MEMS Sensors Based on Through Silicon Via

Liquid Metal Fluidic Connection and Floating Die Structure for Ultra Low Thermomechanical Stress of SiC Power Electronics Packaging