Adhesion of Electron-Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon

S. A. Vabishchevich,N. V. Vabishchevich,S. D. Brinkevich,D. I. Brinkevich,V. S. Prosolovich,S. B. Lastovskii
DOI: https://doi.org/10.1134/s001814392401017x
2024-04-02
High Energy Chemistry
Abstract:In this work, the effect of irradiation with 5-MeV electrons on the adhesive and strength properties of the films of diazoquinone–novolac photoresists FP9120, SPR-700, and S1813 G2 SP15 deposited on single-crystalline silicon wafers by spin-coating has been studied using the indentation method. It has been established that irradiation leads to an increase in the true microhardness of the photoresist films, most pronounced in SPR-700 films, caused by the crosslinking of phenol–formaldehyde resin molecules. It has been shown that the values of the specific peeling energy G of photoresist films on silicon increase upon irradiation as a result of the recombination of radicals at the photoresist/silicon interface with the formation of new covalent bonds Si–C and Si–O–C. The observed experimental results are explained taking into account the radiation-chemical and relaxation processes occurring in the bulk of the polymer film and at the interface.
chemistry, physical
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