Abstract:The impact of the post-trench restoration on the electrical characteristics of vertical GaN power devices is systematically investigated in this work. Following the achievement of microtrench-free GaN trench structure with modified dry etching conditions, the post-trench tetramethylammonium hydroxide (TMAH)-based wet etching and UV/Ozone-based oxidation process are employed to further refine the trench profile. It is shown that the c-plane trench bottom is restored to the level of unetched surface, as evidenced by the improved Schottky interface. Additionally, the post-trench treatment exhibits the anisotropic characteristics with the preferred rounded corner profile on m-plane sidewall compared to a-plane sidewall. The simulations and experimental results demonstrate that the trench MOS barrier Schottky (TMBS) rectifier based on m-plane sidewall could suppress the electric field crowding at the trench corner and, hence, reduce the reverse leakage current by 1–2 orders of magnitude. Furthermore, the MOSCAP test structures were fabricated on the trenches. The extracted interface trap density (Dit) confirms the effective restoration of trench bottom. However, the sidewall surface exhibits the relatively large Dit, which emphasizes the necessity of optimizing the sidewall, particularly for devices incorporating sidewall channel. The demonstrated post-trench restoration technique improves the surface quality and trench structure for the significantly enhanced electrical performances, which is essential for the development of vertical GaN power devices.

Performance Comparisons of GaN Vertical Transistors With Sidewalls Treated by TMAH and H3PO4 Solutions

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs

Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET

Post-trench restoration for vertical GaN power devices

GaN Based Vertical Transistors on GaN Substrates

Annealing Process on MOS channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET

Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs

Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs

Normally-off GaON/p-GaN Gate HEMTs with Selective Plasma Oxidation: from Structural Characterization, Performance Improvement to Physical Mechanism

Comparative Study Between Partially and Fully Recessed‐Gate Enhancement‐Mode AlGaN/GaN MIS HEMT on the Breakdown Mechanism

Comparative Analysis of Microstructure, Electrical and Optical Performance in Sidewall Etching Process for GaN-Based Green Micro-LED

Comparative Study of Characteristics and Interface States with and Without Post‐Gate‐Annealing Treatment for AlGaN/GaN‐Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO2 Gate Insulator on Si Substrates

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Effective Suppression of Interface States in Recessed-Gate MIS-HEMTs by TMAH Wet Etching

Exploration of Gate Trench Module for Vertical GaN devices

Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

Normally-off GaON/p-GaN gate HEMTs with using selective plasma oxidation: from structural characterization, performance improvement to physical mechanism

Effect of Surface Treatment on Electrical Properties of GaN Metal–insulator–semiconductor Devices with Al2O3 Gate Dielectric

Impacts of eliminating ungated access regions on DC and thermal performances of GaN-based MIS-HEMT

Nitride Spacer Aided 0.15 Μm AlGaN/GaN HEMT Fabrication with Optimized Gate Patterning Process