Abstract:Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of GaN-based MOS (metal oxide semiconductor) stacks. The results demonstrate that (i) blanket etching the GaN surface does not degrade the robustness of the deposited dielectric layer; (ii) the addition of the trench etch, while improving reproducibility, results in a decrease in the breakdown performance compared to the planar structures. (iii) For trench structures, the voltage for a 10 year lifetime is still above 20 V, indicating a good robustness. (iv) To review the trapping performance across the metal-dielectric-GaN stack, forward-reverse capacitance–voltage measurements with and without stress and photo-assistance are performed. Overall, as-grown planar capacitors devoid of prior etching steps show the lowest trapping, while trench capacitors have higher interface trapping and bulk trapping comparable to the blanket etched capacitors. (v) The nanostructure of the GaN/dielectric interface was characterized by high resolution scanning transmission electron microscopy. An increased roughness of 2–3 monolayers at the GaN surface was observed after blanket etching, which was correlated with the higher density of interface traps. The results presented in this paper give fundamental insight on how the etch and trench processing affects the trapping and robustness of trench-gate GaN-metal-oxide-semiconductor field effect transistors and provide guidance for the optimization of device performance.

Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET

Performance Comparisons of GaN Vertical Transistors With Sidewalls Treated by TMAH and H3PO4 Solutions

Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs

Annealing Process on MOS channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET

Study and characterization of GaN MOS capacitors: planar versus trench topographies

Growth and Characterization of M Plane GaN Material by MOCVD

Study and characterization of GaN MOS capacitors: Planar vs trench topographies

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer

Post-trench restoration for vertical GaN power devices

Physical Analysis of Normally-off ALD Al2O3/GaN MOSFET with Different Substrates Using Self-Terminating Thermal Oxidation-Assisted Wet Etching Technique

Comparative Analysis of Microstructure, Electrical and Optical Performance in Sidewall Etching Process for GaN-Based Green Micro-LED

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Development of Enhancement-Mode GaN P-Fet with Post-Etch Wet Treatment on P-Gan Gate HEMT Epi-Wafer

Surface Morphology of Polar, Semipolar and Nonpolar Freestanding GaN after Chemical Etching

Modulation of Anisotropic Crystalline in A-Plane GaN on HT-AlN Buffer Layer

Study on Surface Morphology of GaN Growth by MOCVD on GaN/Si(111) Template

Growth behavior of ammonothermal GaN crystals grown on non-polar and semi-polar HVPE GaN seeds

Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer