Abstract:Because digital information in semiconductor spintronics is encoded,stored,processed,and transferred by electron spins instead of its charge,the operation of a spintronic device requires that electrons in semiconductors are spin polarized.But spin states of electrons in traditional semiconductor materials are usually degenerate,therefore,conventional semiconductors cannot are directly exploited to design spintronic devices.Thus,how to spin polarized electrons in ordinary semiconductors (also called spin injection) including its effective manipulation has become an important direction of research.In physics,either Zeeman effect between electron spins and external magnetic fields or spin-orbit coupling of electron spins and its spatial momentums can be employed to achieve electron-spin polarization.According to these physical mechanisms,some effective schemes have been developed successfully,such as spin filtering,temporally separating electron-spins,spatial separations of electron spins,and so on.Utilizing theoretical analysis combined with numerical calculation,transmission time is investigated by considering both Zeeman effect as well as Rashba and Dresselhaus spin-orbit couplings for electron in magnetically confined semiconductor nanostructure,which is constructed on the GaAs/Al x Ga 1-x As heterostructure.Schrödinger equation of an electron is numerically solved by matrix diagonalization and improved transfer-matrix method.Adopting H.G.Winful's theory,dwell time of electron is calculated and spin polarization ratio is given.Due to Zeeman effect and spin-orbit coupling,dwell time of electron is obviously associated with the spins,which is used to separate electron-spins in time dimension and to realize spin polarization of electrons in semiconductors.Because the semiconductor GaAs has a small effective g-factor,electron-spin polarization originates mainly from spin-orbit coupling including Rashba and Dresselhaus types,which is circa 4 times larger than that induced by Zeeman effect.Dwell time of electron and its spin polarization can be efficaciously modified by interfacial confining electric-field or strain engineering,as the effective potential of electron is related to spin-orbit coupling's strength.These interesting findings not only have some references for spin injection into semiconductors,but also provide a controllable temporal electron-spin splitter for semiconductor spintronics device applications.

Temporal Electron-Spin Splitter Based on a Semiconductor Microstructure Constructed on Surface of InAs/Al x In 1-x As Heterostructure by Patterning a Ferromagnetic Stripe and a Schottky-Metal Stripe

Separating spins by dwell time of electrons across a magnetic microstructure

The δ-doping manipulable temporal spin splitter for electron in semiconductor magnetic quantum microstructure

Spin polarization in time domain for electrons in a magnetic microstructure

Transmission time and spin polarization for electron in magnetically confined semiconducotr nanostructure modulated by spin-orbit coupling

Spin splitting effect in semiconductor-based magnetoresistance device

Ultrafast Optical Observation of Spin-Pumping Induced Dynamic Exchange Coupling in Ferromagnetic Semiconductor/metal Bilayer.

Spin polarization created by spin-orbit coupling for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure

Spin-orbit-coupling induced electron-spin polarization in magnetically and electrically confined semiconductor microstructure

Spin polarization control in a 2-dimensional semiconductor

Spin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet/ferromagnet/semiconductor structures

Controlled spatial separation of spins and coherent dynamics in spin-orbit-coupled nanostructures

Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN.

Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance

From Nanoelectronics to Nano-Spintronics.

Spin-Tunneling Time in A Hybrid Semimagnetic/Semiconductor Heterostructure with A Single Paramagnetic Layer

Electron-spin filter based on Dresselhaus spin-orbit-coupling modulated double-layered semiconductor microstructure

Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure

Spin Injection into Semiconductors Driven by A Spin Battery

Spin-dependent Tunneling Time in Periodic Diluted-Magnetic-semiconductor/nonmagnetic-barrier Superlattices

Tunneling Time of Spin-Polarized Electrons in Ferromagnet/insulator (semiconductor) Double Junctions under an Applied Electric Field