Abstract:Because digital information in semiconductor spintronics is encoded,stored,processed,and transferred by electron spins instead of its charge,the operation of a spintronic device requires that electrons in semiconductors are spin polarized.But spin states of electrons in traditional semiconductor materials are usually degenerate,therefore,conventional semiconductors cannot are directly exploited to design spintronic devices.Thus,how to spin polarized electrons in ordinary semiconductors (also called spin injection) including its effective manipulation has become an important direction of research.In physics,either Zeeman effect between electron spins and external magnetic fields or spin-orbit coupling of electron spins and its spatial momentums can be employed to achieve electron-spin polarization.According to these physical mechanisms,some effective schemes have been developed successfully,such as spin filtering,temporally separating electron-spins,spatial separations of electron spins,and so on.Utilizing theoretical analysis combined with numerical calculation,transmission time is investigated by considering both Zeeman effect as well as Rashba and Dresselhaus spin-orbit couplings for electron in magnetically confined semiconductor nanostructure,which is constructed on the GaAs/Al x Ga 1-x As heterostructure.Schrödinger equation of an electron is numerically solved by matrix diagonalization and improved transfer-matrix method.Adopting H.G.Winful's theory,dwell time of electron is calculated and spin polarization ratio is given.Due to Zeeman effect and spin-orbit coupling,dwell time of electron is obviously associated with the spins,which is used to separate electron-spins in time dimension and to realize spin polarization of electrons in semiconductors.Because the semiconductor GaAs has a small effective g-factor,electron-spin polarization originates mainly from spin-orbit coupling including Rashba and Dresselhaus types,which is circa 4 times larger than that induced by Zeeman effect.Dwell time of electron and its spin polarization can be efficaciously modified by interfacial confining electric-field or strain engineering,as the effective potential of electron is related to spin-orbit coupling's strength.These interesting findings not only have some references for spin injection into semiconductors,but also provide a controllable temporal electron-spin splitter for semiconductor spintronics device applications.

Separating spins by dwell time of electrons across a magnetic microstructure

Temporal Electron-Spin Splitter Based on a Semiconductor Microstructure Constructed on Surface of InAs/Al x In 1-x As Heterostructure by Patterning a Ferromagnetic Stripe and a Schottky-Metal Stripe

The δ-doping manipulable temporal spin splitter for electron in semiconductor magnetic quantum microstructure

Spin polarization in time domain for electrons in a magnetic microstructure

Transmission time and spin polarization for electron in magnetically confined semiconducotr nanostructure modulated by spin-orbit coupling

Spin-flip process through a quantum dot coupled to ferromagnetic electrodes

Spin splitting effect in semiconductor-based magnetoresistance device

Spin Filtering in the Double-Barrier Structure

Spin-dependent Tunneling Time in Periodic Diluted-Magnetic-semiconductor/nonmagnetic-barrier Superlattices

Ultrafast Optical Observation of Spin-Pumping Induced Dynamic Exchange Coupling in Ferromagnetic Semiconductor/metal Bilayer.

Spin filtering and spin separation in diluted magnetic semiconductor hybrid systems

Reconfigurable Ferromagnetic Resonances by Engineering Inhomogeneous Magnetic Textures in Artificial Magnonic Crystals

Controlled spatial separation of spins and coherent dynamics in spin-orbit-coupled nanostructures

Spin-orbit-coupling induced electron-spin polarization in magnetically and electrically confined semiconductor microstructure

Spin Transverse Separation in A Two-Dimensional Electron-Gas Using an External Magnetic Field with A Topological Chirality

Magnetic MnxGe1-x Dots for Spintronics Applications

Spin-Dependent Transport Through Cd1-Xmnxte Diluted Magnetic Semiconductor Quantum Dots

Reconfigurable Pinwheel Artificial-Spin-Ice and Superconductor Hybrid Device

Tuning Magnetic Droplets in Nanocontact Spin-Torque Oscillators Using Electric Fields

Spin-Dependent Delay Time and the Hartman Effect in Tunneling Through Diluted-Magnetic-Semiconductor/Semiconductor Heterostructures

How to produce spin-splitting in antiferromagnetic materials