Abstract:Recently, Ag-film has been utilized as a reflective layer in organic-light-emitting- diode on silicion(OLEDoS). The formation of a reflective Ag-film layer was conducted by Ag-film deposition and following Ag-film chemical-mechanical planarization (CMP). The Ag-film has ductility property (i.e., hardness of 0.3 GPa) so that a reletively soft CMP pad should be used to minimize the generation of the CMP induced scratches. However, using a soft CMP pad, it is notably difficult to achieve a high Ag-film polishing-rate (i.e., 300 nm/min). Thus, to enhance Ag-film polishing-rate, a Fenton reaction between ferric ions and H 2 O 2 has been applied. Although, a Fenton reaction enhancing dissolved oxygen concentration can increase remarkably the Ag-film polishing-rate, the CMP slurry using Fenton reaction has produced a detrimental slurry stability after mixing with H 2 O 2 (i.e., extremely low H 2 O 2 pot life time. In this study, as a solution, the Ag-film CMP slurry was designed via radical oxidation on the Ag-film surface during CMP, without using Fenton reaction (i.e., mixing ferric ions with H 2 O 2 ). The radical oxidation was achived by using halide oxidant (i.e., H 5 IO 6 ), which radical oxidation degree principally depended on halide oxidant concentration and slurry pH, showing a notable high Ag-film polishing-rate (i.e., 400 nm/min) without the precence of corrosion. Without using Fenton reaction, the secondary diameter of colloidal abrasives in the designed Ag-film CMP slurry was not changed for several months. In our presentation, we will prove the mechanism of the radical oxidation on the polished Ag-film surface. In addition, we will present the dependencies of the chemical dominant polishing properties (i.e., OH radical, chemical oxidation degree of the Ag-film surfcae, chemical composition of chemical oxidation, slurry adsortion degree, and corrosion potential and current) as well as the mechanical dominant polishing properties (i.e., electrostatic force between abrasives and Ag-film surface) on the halid oxidant concentration.

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