A new monocrystalline 2D high- κ dielectric

Giulia Pacchioni

DOI: https://doi.org/10.1038/s41578-024-00757-z

IF: 83.5

2024-11-26

Nature Reviews Materials

Abstract:An article in Nature Materials reports the synthesis of single crystals of ultrathin gadolinium pentoxide (Gd2O5) that combine a high dielectric constant of 25.5 and a wide bandgap of almost 7 eV.

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

High- κ monocrystalline dielectrics for low-power two-dimensional electronics

Lei Yin,Ruiqing Cheng,Xuhao Wan,Jiahui Ding,Jun Jia,Yao Wen,Xiaoze Liu,Yuzheng Guo,Jun He

DOI: https://doi.org/10.1038/s41563-024-02043-3

IF: 41.2

2024-11-08

Nature Materials

Abstract:The downscaling of complementary metal-oxide-semiconductor technology has produced breakthroughs in electronics, but more extreme scaling has hit a wall of device performance degradation. One key challenge is the development of insulators with high dielectric constant, wide bandgap and high tunnel masses. Here, we show that two-dimensional monocrystalline gadolinium pentoxide, which is devised through combining particle swarm optimization algorithm and theoretical calculations and synthesized via van der Waals epitaxy, could exhibit a high dielectric constant of ~25.5 and a wide bandgap simultaneously. A desirable equivalent oxide thickness down to 1 nm with an ultralow leakage current of ~10 −4 A cm −2 even at 5 MV cm −1 is achieved. The molybdenum disulfide transistors gated by gadolinium pentoxide exhibit high on/off ratios over 10 8 and near-Boltzmann-limit subthreshold swing at an operation voltage of 0.5 V. We also constructed inverter circuits with high gain and nanowatt power consumption. This reliable approach to integrating ultrathin monocrystalline insulators paves the way to future nanoelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Single-crystalline High-κ GdOCl Dielectric for Two-Dimensional Field-Effect Transistors

Weiting Xu,Jiayang Jiang,Yujia Chen,Ning Tang,Chengbao Jiang,Shengxue Yang

DOI: https://doi.org/10.1038/s41467-024-53907-w

IF: 16.6

2024-01-01

Nature Communications

Abstract:Two-dimensional (2D) dielectrics, integrated with high-mobility semiconductors, show great promise to overcome the scaling limits in miniaturized integrated circuits. However, the 2D dielectrics explored to date still face the challenges of low crystallinity, diminished dielectric constant, and the lack of effective synthesis methods. Here, we report the controllable synthesis of ultra-thin gadolinium oxychloride (GdOCl) nanosheets via a chloride hydrate-assisted chemical vapor deposition (CVD) method. The resultant GdOCl nanosheets display good dielectric properties, including a high dielectric constant (high-kappa) of 15.3, robust breakdown field strengths (E-bd) exceeding 9.9 MV/cm, and minimal gate leakage currents of approximately 10(-6) A/cm(2). The top-gated GdOCl/MoS2 field-effect transistors (FETs) exhibit commendable switch characteristics, a negligible hysteresis of similar to 5 mV and a subthreshold swing down to 67.9 mV dec(-1). The GdOCl/MoS2 FETs can also be employed to construct functional logic gates. Our study underscores the significant potential of the 2D GdOCl dielectric for innovative high-speed operated nanoelectronic devices.
A high-$κ$ wide-gap layered dielectric for two-dimensional van der Waals heterostructures

A. Söll,E. Lopriore,A. K. Ottesen,J. Luxa,G. Pasquale,J. Sturala,F. Hájek,V. Jarý,D. Sedmidubský,K. Mosina,A. Kis,Z. Sofer

2023-07-25

Abstract:Van der Waals heterostructures of two-dimensional materials have opened up new frontiers in condensed matter physics, unlocking unexplored possibilities in electronic and photonic device applications. However, the investigation of wide-gap high-$\kappa$ layered dielectrics for devices based on van der Waals structures has been relatively limited. In this work, we demonstrate an easily reproducible synthesis method for the rare earth oxyhalide LaOBr, and we exfoliate it as a 2D layered material with a measured static dielectric constant of $\epsilon_{0, \perp} \simeq 9$ and a wide bandgap of 5.3 eV. Furthermore, our research demonstrates that LaOBr can be used as a high-$\kappa$ dielectric in van der Waals field-effect transistors with high performance and low interface defect concentrations. Additionally, it proves to be an attractive choice for electrical gating in excitonic devices based on 2D materials. Our work demonstrates the versatile realization and functionality of 2D systems with wide-gap and high-$\kappa$ van der Waals dielectric environments.

Mesoscale and Nanoscale Physics
Single-crystalline van der Waals layered dielectric with high dielectric constant

Congcong Zhang,Teng Tu,Jingyue Wang,Yongchao Zhu,Congwei Tan,Liang Chen,Mei Wu,Ruixue Zhu,Yizhou Liu,Huixia Fu,Jia Yu,Yichi Zhang,Xuzhong Cong,Xuehan Zhou,Jiaji Zhao,Tianran Li,Zhimin Liao,Xiaosong Wu,Keji Lai,Binghai Yan,Peng Gao,Qianqian Huang,Hai Xu,Huiping Hu,Hongtao Liu,Jianbo Yin,Hailin Peng

DOI: https://doi.org/10.1038/s41563-023-01502-7

IF: 41.2

2023-03-10

Nature Materials

Abstract:The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces challenges such as interface imperfection and gate current leakage for an ultrathin silicon channel 1,2 . For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration 1,2 . However, further progress towards 2D electronics is hindered by factors such as the lack of a high dielectric constant ( κ ) dielectric with an atomically flat and dangling-bond-free surface 3,4 . Here, we report a facile synthesis of a single-crystalline high- κ ( κ of roughly 16.5) van der Waals layered dielectric Bi 2 SeO 5 . The centimetre-scale single crystal of Bi 2 SeO 5 can be efficiently exfoliated to an atomically flat nanosheet as large as 250 × 200 μm 2 and as thin as monolayer. With these Bi 2 SeO 5 nanosheets as dielectric and encapsulation layers, 2D materials such as Bi 2 O 2 Se, MoS 2 and graphene show improved electronic performances. For example, in 2D Bi 2 O 2 Se, the quantum Hall effect is observed and the carrier mobility reaches 470,000 cm 2 V −1 s −1 at 1.8 K. Our finding expands the realm of dielectric and opens up a new possibility for lowering the gate voltage and power consumption in 2D electronics and integrated circuits.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Gadolinium scandate by high-pressure sputtering for future generations of high-k dielectrics

Pedro Carlos Feijoo,María Ángela Pampillón,Enrique San Andrés,José Luis G. Fierro

DOI: https://doi.org/10.1088/0268-1242/28/8/085004

2024-01-30

Abstract:Gd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (100) silicon by alternating the deposition of lower than 0.5 nm thick films of its binary components: Sc2O3 and Gd2O3. The formation of the ternary oxide was observed after the thermal treatments, with a high increase in the effective permittivity of the dielectric (up to 21). The silicon diffuses into the Gd2-xScxO3 films, which show an amorphous character. After the annealing no interfacial silicon oxide is present. CHF-VG curves indicated low hysteresis (55 mV) and a density of interfacial defects of 6e11 eV-1 cm-2.

Materials Science,Applied Physics
Phase Control of Magnetron Sputtering Deposited Gd2O3 Thin Films As High-Κ Gate Dielectrics

Yue Shoujing,Wei Feng,Wang Yi,Yang Zhimin,Tu Hailing,Du Jun

DOI: https://doi.org/10.1016/s1002-0721(08)60098-8

2008-01-01

Abstract:Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si(001) substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the films grown from 450 to 570 °C were crystalline, and the Gd2O3 thin films consisted of a mixture of cubic and monoclinic phases. The growth temperature was a critical parameter for the phase constituents and their relative amount. Low temperature was favorable for the formation of cubic phase while higher temperature gave rise to more monoclinic phase. All the Gd2O3 thin films grown from different temperatures exhibited acceptable electrical properties, such as low leakage current density (JL) of 10−5 A/cm2 at zero bias with capacitance equivalent SiO2 thickness in the range of 6–13 nm. Through the comparison between films grown at 450 and 570 °C, the existence of monoclinic phase caused an increase in JL by nearly one order of magnitude and a reduction of effective dielectric constant from 17 to 9.
Ultra-low thermal conductivity and high thermoelectric performance of two-dimensional Ga2O2: A comprehensive first-principles study

Zhe Kang,Yuhua Li,Tianhao Xia

DOI: https://doi.org/10.1016/j.ijheatmasstransfer.2024.125286

IF: 5.2

2024-05-01

International Journal of Heat and Mass Transfer

Abstract:Gallium oxide such as two-dimensional (2D) Ga2O3 monolayers has been widely used in lasers, dielectric coatings for solar cells, low-dimensional electronic and optoelectronic device applications due to their excellent electrical optical and thermal properties. In this work, we predicted a new 2D gallium oxide Ga2O2 and systematically investigated its stability, electronic properties, and thermoelectric performance. The phonon dispersion, elastic tensor and ab initio molecular dynamics simulations show that the Ga2O2 monolayer is dynamically, mechanics and thermally stable. We find the Ga2O2 monolayer is an indirect semiconductor with a wide band gap of 2.77 eV and high electron mobility. In particular, 2D Ga2O2 has extremely low thermal conductivity and the optical phonons dominate the thermal conductivity. By analyzing its harmonic and anharmonic properties, we find that the weak interaction between Ga atoms is the main reason for this phenomenon. At last, we predict that the maximum ZT values of 2D Ga2O2 are evaluated up to 6.5 at 500 K and 3.3 at 300 K, respectively. With ultra-low thermal conductivity and high thermoelectric performance, 2D Ga2O2 is considered a potential candidate for thermoelectric materials.

engineering, mechanical,thermodynamics,mechanics
Prediction of nonlayered oxide monolayers as flexible high-κ dielectrics with negative Poisson's ratios

Yue Hu,Jingwen Jiang,Peng Zhang,Zhuang Ma,Fuxin Guan,Da Li,Zhengfang Qian,Xiuwen Zhang,Pu Huang

DOI: https://doi.org/10.1038/s41467-023-42312-4

2023-10-17

Abstract:During the last two decades, two-dimensional (2D) materials have been the focus of condensed matter physics and material science due to their promising fundamental properties and (opto-)electronic applications. However, high-κ 2D dielectrics that can be integrated within 2D devices are often missing. Here, we propose nonlayered oxide monolayers with calculated exfoliation energy as low as 0.39 J/m2 stemming from the ionic feature of the metal oxide bonds. We predict 51 easily or potentially exfoliable oxide monolayers, including metals and insulators/semiconductors, with intriguing physical properties such as ultra-high κ values, negative Poisson's ratios and large valley spin splitting. Among them, the most promising dielectric, GeO2, exhibits an auxetic effect, a κ value of 99, and forms type-I heterostructures with MoSe2 and HfSe2, with a band offset of ~1 eV. Our study opens the way for designing nonlayered 2D oxides, offering a platform for studying the rich physics in ultra-thin oxides and their potential applications in future information technologies.
A native oxide high-κ gate dielectric for two-dimensional electronics

Tianran Li,Teng Tu,Yuanwei Sun,Huixia Fu,Jia Yu,Lei Xing,Ziang Wang,Huimin Wang,Rundong Jia,Jinxiong Wu,Congwei Tan,Yan Liang,Yichi Zhang,Congcong Zhang,Yumin Dai,Chenguang Qiu,Ming Li,Ru Huang,Liying Jiao,Keji Lai,Binghai Yan,Peng Gao,Hailin Peng

DOI: https://doi.org/10.1038/s41928-020-0444-6

IF: 33.255

2020-07-27

Nature Electronics

Abstract:<p>Nature Electronics, Published online: 27 July 2020; <a href="https://www.nature.com/articles/s41928-020-0444-6">doi:10.1038/s41928-020-0444-6</a></p>An atomically thin high-κ gate dielectric of Bi2SeO5 can be formed via layer-by-layer oxidization of an underlying two-dimensional semiconductor, allowing high-performance field-effect transistors and inverters to be fabricated.

engineering, electrical & electronic
High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

María Ángela Pampillón,Enrique San Andrés,Pedro Carlos Feijoo,José Luis G. Fierro

DOI: https://doi.org/10.1088/1361-6641/aa58cc

2024-01-30

Abstract:This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obtained by the deposition of a metallic nanolaminate of Gd and Sc alternating layers, which is afterwards in-situ oxidized by plasma. The oxide films obtained were close to stoichiometry, amorphous and with minimal interfacial regrowth. By fabricating metal-insulator-semiconductor capacitors we found that a moderate temperature annealing is needed to enhance permittivity, which reaches a high value of 32 while keeping moderate leakage. Finally, the feasibility of interface scavenging in this material with Ti gate electrodes is also demonstrated.

Materials Science,Applied Physics
Magnesium niobate as a high- κ gate dielectric for two-dimensional electronics

Cheng-Yi Zhu,Meng-Ru Zhang,Qing Chen,Lin-Qing Yue,Rong Song,Cong Wang,Hui-Zhen Li,Feichi Zhou,Yang Li,Weiwei Zhao,Liang Zhen,Mengwei Si,Jia Li,Jingli Wang,Yang Chai,Cheng-Yan Xu,Jing-Kai Qin

DOI: https://doi.org/10.1038/s41928-024-01245-6

IF: 33.255

2024-09-19

Nature Electronics

Abstract:Nature Electronics, Published online: 18 September 2024; doi:10.1038/s41928-024-01245-6 A high-κ dielectric ceramic, magnesium niobate, can be epitaxially grown on a mica substrate and then transferred to form the gate dielectric in molybdenum disulfide transistors, providing van der Waals interfaces and high robustness to temperature and voltage.

engineering, electrical & electronic
Enhanced Mechanical and Electromechanical Properties of Compositionally Complex Zirconia Zr 1- x (Gd 1/5 Pr 1/5 Nd 1/5 Sm 1/5 Y 1/5 ) x O 2-δ Ceramics

Ahsanul Kabir,Bartlomiej Lemieszek,Maxim Varenik,Victor Buratto Tinti,Sebastian Molin,Igor Lubomirsky,Vincenzo Esposito,Frank Kern

DOI: https://doi.org/10.1021/acsami.3c17501

IF: 9.5

2024-03-02

ACS Applied Materials & Interfaces

Abstract:Compositionally complex oxides (CCOs) or high-entropy oxides (HEOs) are new multielement oxides with unexplored physical and functional properties. In this work, we report fluorite structure-derived compositionally complex zirconia with composition Zr(1-x)(Gd(1/5)Pr(1/5)Nd(1/5)Sm(1/5)Y(1/5))(x)O(2-δ) (x = 0.1 and 0.2) synthesized in solid-state reaction route and sintered via hot pressing at 1350 °C. We explore the evolution of these oxides' structural, microstructural, mechanical, electrical,...

materials science, multidisciplinary,nanoscience & nanotechnology
Vertically grown ultrathin Bi 2 SiO 5 as high- κ single-crystalline gate dielectric

Jiabiao Chen,Zhaochao Liu,Xinyue Dong,Zhansheng Gao,Yuxuan Lin,Yuyu He,Yingnan Duan,Tonghuai Cheng,Zhengyang Zhou,Huixia Fu,Feng Luo,Jinxiong Wu

DOI: https://doi.org/10.1038/s41467-023-40123-1

IF: 16.6

2023-07-21

Nature Communications

Abstract:Single-crystalline high- κ dielectric materials are desired for the development of future two-dimensional (2D) electronic devices. However, curent 2D gate insulators still face challenges, such as insufficient dielectric constant and difficult to obtain free-standing and transferrable ultrathin films. Here, we demonstrate that ultrathin Bi 2 SiO 5 crystals grown by chemical vapor deposition (CVD) can serve as excellent gate dielectric layers for 2D semiconductors, showing a high dielectric constant (>30) and large band gap (~3.8 eV). Unlike other 2D insulators synthesized via in-plane CVD on substrates, vertically grown Bi 2 SiO 5 can be easily transferred onto other substrates by polymer-free mechanical pressing, which greatly facilitates its ideal van der Waals integration with few-layer MoS 2 as high- κ dielectrics and screening layers. The Bi 2 SiO 5 gated MoS 2 field-effect transistors exhibit an ignorable hysteresis (~3 mV) and low drain induced barrier lowering (~5 mV/V). Our work suggests vertically grown Bi 2 SiO 5 nanoflakes as promising candidates to improve the performance of 2D electronic devices.

multidisciplinary sciences
Dielectric Properties of Pure and Gd‐Doped HfO2 Ceramics

Chunchang Wang,Da Zhang,Hong Wang,Yi Yu,Yide Li,Qiuju Li

DOI: https://doi.org/10.1111/jace.13846

IF: 4.186

2015-01-01

Journal of the American Ceramic Society

Abstract:The pure, 2 at.%, and 20 at.% Gd‐doped HfO2 ceramics were prepared by the standard solid‐state reaction technique. Dielectric properties of these ceramics were investigated in the temperature range 300–1050 K and frequency range 20–5 × 106 Hz. Our results revealed an intrinsic dielectric constant around 20 in the temperature below 450 K for all tested ceramics. Two oxygen‐vacancy‐related relaxations R1 and R2 were observed at temperatures higher than 450 K, which were identified to be a dipolar relaxation due to grain response and a Maxwell–Wagner relaxation due to grain‐boundary response, respectively. The dielectric properties of the pure and slightly doped (2 at.%,) samples are dominated by the grain‐boundary response, which results in a colossal dielectric behavior similar to that found in CaCu3Ti4O12. The doping level of 20 at.% leads to the structural transformation from monoclinic phase to cubic phase. The dielectric properties of the heavily doped HfO2 are dominated by the grain response without any colossal dielectric behavior.
Ultraflat hexagonal boron nitride for high- κ dielectric integration

Hayoung Ko,Seungjin Lee,Ki Kang Kim

DOI: https://doi.org/10.1038/s41563-024-02013-9

IF: 41.2

2024-10-30

Nature Materials

Abstract:An ultraflat, single-crystal hexagonal boron nitride film enables the production of wafer-scale, ultrathin high-κ dielectrics for two-dimensional electronics, meeting the 2025 targets set by the International Roadmap for Devices and Systems.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Tailoring dielectric permittivity of epitaxial Gd-doped CeO2-x films by ionic defects

A Palliotto,Y Wu,A D Rata,A Herklotz,S Zhou,K Dörr,P Muralt,D-S Park

DOI: https://doi.org/10.1088/2515-7655/ad2452

2024-02-01

Journal of Physics Energy

Abstract:Engineering materials with highly tunable physical properties in response to external stimuli is a cornerstone strategy for advancing energy technology. Among various approaches, engineering ionic defects and understanding their roles are essential in tailoring emergent material properties and functionalities. Here, we demonstrate an effective approach for creating and controlling ionic defects (oxygen vacancies) in epitaxial Gd-doped CeO2-x (CGO) (001) films grown on Nb: SrTiO3(001) single crystal. Our results exhibit a significant limitation in the formation of excess oxygen vacancies in the films during high-temperature film growth. However, we have discovered that managing the oxygen vacancies in the epitaxial CGO (001) films is feasible using a twostep film growth process. Subsequently, our findings show that manipulating excess oxygen vacancies is a key to the emergence of giant apparent dielectric permittivity (e.g., ε′ ≈106) in the epitaxial films under electrical field control. Overall, the strategy of tuning functional ionic defects in CGO and similar oxides is beneficial for various applications such as electromechanical, sensing, and energy storage applications.

materials science, multidisciplinary,energy & fuels
[Congenital dilation of the distal portion of the left ureter].

W. Forssmann

Abstract:
Gadolinium Halide Monolayers: A Fertile Family of Two-Dimensional 4f Magnets

Haipeng You,Ning Ding,Jun Chen,Xiaoyan Yao,Shuai Dong

DOI: https://doi.org/10.1021/acsaelm.2c00384

IF: 4.494

2022-05-17

ACS Applied Electronic Materials

Abstract:Two-dimensional (2D) magnets have great potentials for applications in next-generation information devices. Since the recent experimental discovery of intrinsic 2D magnetism in monolayer CrI3 and few-layer Cr2Ge2Te6, intense studies have been stimulated in pursuing more 2D magnets and revealing their intriguing physical properties. In comparison to the magnetism based on 3d electrons, 4f electrons can provide larger magnetic moments and stronger spin–orbit coupling but have been much less studied in the 2D forms. Only in very recent years have some exciting results been obtained in this area. In this mini-review, we will introduce some recent progress in 2D Gd halides from a theoretical aspect. It is noteworthy that 4f and 5d orbitals of Gd both play key roles in these materials. For GdX2 (X = I, Br, Cl, F) monolayers and related Janus monolayers, robust ferromagnetism with large exchanges comes from the 4f7 + 5d1 hybridization of Gd2+. The spatially expanded 5d electrons act as a bridge to couple localized 4f spins. For GdX3 monolayers, the intercalation of metal atoms can dope electrons into Gd’s 5d orbitals, which leads to numerous intriguing physical properties, such as ferroelasticity, ferromagnetism, and anisotropic conductance. In brief, Gd halides establish an effective strategy to take advantage of f-electron magnetism in 2D materials.

materials science, multidisciplinary,engineering, electrical & electronic
Microstructural Evolution and High-Performance Giant Dielectric Properties of Lu3+/Nb5+ Co-Doped TiO2 Ceramics

Noppakorn Thanamoon,Narong Chanlek,Pornjuk Srepusharawoot,Ekaphan Swatsitang,Prasit Thongbai

DOI: https://doi.org/10.3390/molecules26227041

IF: 4.6

2021-11-22

Molecules

Abstract:Giant dielectric (GD) oxides exhibiting extremely large dielectric permittivities (ε' > 104) have been extensively studied because of their potential for use in passive electronic devices. However, the unacceptable loss tangents (tanδ) and temperature instability with respect to ε' continue to be a significant hindrance to their development. In this study, a novel GD oxide, exhibiting an extremely large ε' value of approximately 7.55 × 104 and an extremely low tanδ value of approximately 0.007 at 103 Hz, has been reported. These remarkable properties were attributed to the synthesis of a Lu3+/Nb5+ co-doped TiO2 (LuNTO) ceramic containing an appropriate co-dopant concentration. Furthermore, the variation in the ε' values between the temperatures of -60 °C and 210 °C did not exceed ±15% of the reference value obtained at 25 °C. The effects of the grains, grain boundaries, and second phase particles on the dielectric properties were evaluated to determine the dielectric properties exhibited by LuNTO ceramics. A highly dense microstructure was obtained in the as-sintered ceramics. The existence of a LuNbTiO6 microwave-dielectric phase was confirmed when the co-dopant concentration was increased to 1%, thereby affecting the dielectric behavior of the LuNTO ceramics. The excellent dielectric properties exhibited by the LuNTO ceramics were attributed to their inhomogeneous microstructure. The microstructure was composed of semiconducting grains, consisting of Ti3+ ions formed by Nb5+ dopant ions, alongside ultra-high-resistance grain boundaries. The effects of the semiconducting grains, insulating grain boundaries (GBs), and secondary microwave phase particles on the dielectric relaxations are explained based on their interfacial polarizations. The results suggest that a significant enhancement of the GB properties is the key toward improvement of the GD properties, while the presence of second phase particles may not always be effective.
Explore of exfoliable multifunctional high-k two-dimensional oxides

Yue Hu,Jingwen Jiang,Peng Zhang,Fuxin Guan,Da Li,Zhengfang Qian,Pu Huang,Xiuwen Zhang

DOI: https://doi.org/10.48550/arXiv.2212.01731

2022-12-04

Materials Science

Abstract:As the continuing down-scaling of field-effect transistors (FETs) in more-than-Moore integrated circuits, finding new functional two-dimensional (2D) materials with a higher dielectric constant (high-k) serve as gate dielectrics is critical. Here, we identify dozens of binary 2D oxides by screening potentially exfoliable bulk metal oxides despite of their non-layered structures followed by simulation of the exfoliation process. For dynamically stable materials, we fully characterize their static dielectric constants and electronic structures, among which GeO2(011)/(101)/(1-11) 2D oxides exhibit unusually high k values (85-99), being much higher than the k of the currently highly regarded 2D dielectrics CaF2 (k ~6) and \b{eta}-Bi2SeO5 (k ~22), together with band gap of 3.3 eV. We further design 2D high-k oxides/2D semiconductors (such as MoS2) heterostructures, and determine by DFT calculations whether they can form Van der Waals interfaces to evaluate their compatibility as gate dielectrics in 2D FETs. In addition to dielectric properties, we also explore magnetic and mechanical properties of potentially exfoliable 2D oxides, revealing a number of functional materials that can be studied experimentally, notably including ferromagnetic half semiconductors, non-magnetic spintronic materials, flexible high-k 2D oxides, and auxetic monolayers.

A new monocrystalline 2D high- κ dielectric

High- κ monocrystalline dielectrics for low-power two-dimensional electronics

Single-crystalline High-κ GdOCl Dielectric for Two-Dimensional Field-Effect Transistors

A high-$κ$ wide-gap layered dielectric for two-dimensional van der Waals heterostructures

Single-crystalline van der Waals layered dielectric with high dielectric constant

Gadolinium scandate by high-pressure sputtering for future generations of high-k dielectrics

Phase Control of Magnetron Sputtering Deposited Gd2O3 Thin Films As High-Κ Gate Dielectrics

Ultra-low thermal conductivity and high thermoelectric performance of two-dimensional Ga2O2: A comprehensive first-principles study

Prediction of nonlayered oxide monolayers as flexible high-κ dielectrics with negative Poisson's ratios

A native oxide high-κ gate dielectric for two-dimensional electronics

High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

Magnesium niobate as a high- κ gate dielectric for two-dimensional electronics

Enhanced Mechanical and Electromechanical Properties of Compositionally Complex Zirconia Zr 1- x (Gd 1/5 Pr 1/5 Nd 1/5 Sm 1/5 Y 1/5 ) x O 2-δ Ceramics

Vertically grown ultrathin Bi 2 SiO 5 as high- κ single-crystalline gate dielectric

Dielectric Properties of Pure and Gd‐Doped HfO2 Ceramics

Ultraflat hexagonal boron nitride for high- κ dielectric integration

Tailoring dielectric permittivity of epitaxial Gd-doped CeO2-x films by ionic defects

[Congenital dilation of the distal portion of the left ureter].

Gadolinium Halide Monolayers: A Fertile Family of Two-Dimensional 4f Magnets

Microstructural Evolution and High-Performance Giant Dielectric Properties of Lu3+/Nb5+ Co-Doped TiO2 Ceramics

Explore of exfoliable multifunctional high-k two-dimensional oxides