Abstract:Abstract Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors. However, due to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties. Herein, we demonstrate the fabrication of atomically thin single-crystalline Al 2 O 3 (c-Al 2 O 3 ) as the high-quality top-gate dielectric layer in 2D FETs. By using the epitaxial lift-off and intercalative oxidation techniques, a stable, stoichiometric, and atomically thin c-Al 2 O 3 layer with a thickness of 1.25 nm is formed on the single-crystalline Al surface. Owing to the favorable crystalline structure and well-defined interfaces, the gate leakage current, interface state density, and dielectric strength meet the International Roadmap for Devices and Systems (IRDS) requirements for low-power devices. By means of a one-step transfer process of the source, drain, dielectric materials, and gate onto molybdenum disulfide (MoS 2 ), the self-aligned top-gate MoS 2 FET devices are fabricated. Since direct lithography or high-energy deposition can be avoided during fabrication, the MoS 2 FETs deliver outstanding performance including a steep subthreshold swing of 61 mV/dec, extremely high on/off current ratio of 10 8 , and negligible hysteresis of 10 mV. In addition, a batch of 100 FETs with good uniformity of electronical characteristics has been fabricated. The innovative technique and materials demonstrate the possibility of producing high-quality single-crystalline oxides such as ferroelectric oxides, wide-bandgap oxides, and magnetic oxides suitable for integration into fully scalable advanced 2D FETs including negative capacitance transistors and spin transistors.

Explore of exfoliable multifunctional high-k two-dimensional oxides

Prediction of nonlayered oxide monolayers as flexible high-κ dielectrics with negative Poisson's ratios

A native oxide high-kappa gate dielectric for two-dimensional electronics

Scalable Integration of Hybrid High-Κ Dielectric Materials on Two-Dimensional Semiconductors

Two-dimensional Perovskite Oxide High-Κ Dielectric for High-Performance Phototransistors

Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors

Laser writable high-K dielectric for van der Waals nano-electronics

Single-crystalline metal oxides as dielectrics for top-gate two-dimensional transistors

Reliability of Ultrathin High- Dielectrics on 2D Semiconductors

Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures

Single-crystalline van der Waals layered dielectric with high dielectric constant

2D Indium Phosphorus Sulfide (In2 P3 S9 ): An Emerging van der Waals High-k Dielectrics.

Reliability of Ultrathin High-κ Dielectrics on Chemical-vapor Deposited 2D Semiconductors

Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

Liquid Metal Oxide-Assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Single-crystalline High-κ GdOCl Dielectric for Two-Dimensional Field-Effect Transistors

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

High- k Monolayer CaF 2 as the Gate Dielectric for Two-Dimensional SiC-Based Field-Effect Transistors

Improved Integration of Ultra-Thin High-K Dielectrics in Few-Layer Mos2 Fet by Remote Forming Gas Plasma Pretreatment

Advances in atomic layer deposited high-κ inorganic materials for gate dielectrics engineering of two-dimensional MoS2 field effect transistors