Abstract:Organic electronics have attracted intensive research interest in the past decades (Chen et al., 2020; Yao et al., 2020; Tang et al., 2021). The ever-increasing demand for organic electronics calls for the development of high-performance and high-stability organic thin-film transistors (OFETs). OFETs are considered key components to fabricate flexible and printable devices for promising applications, such as flexible displays, chemical sensors, wearable devices, and radio frequency identification (RFID) tags. The design and synthesis of novel structural materials (such as semiconductors, dielectrics, electrodes, and substrates), as well as the development of efficient interface engineering strategies, would further promote the development of flexible electronics and lay the foundation for their early commercialization (Ji et al., 2019; Ji et al., 2021). Despite remarkable progress in the development of new materials and relevant applications in organic electronics, some challenges remain, not only on the design and synthesis of novel structural materials (such as π-conjugated small molecule or polymer semiconductors, dielectrics, electrodes, and substrates), but also the development of efficient interface engineering strategies, for the fabrication of high-performance and high-stability devices, and eventually the realization of commercially available products. For example: 1) The need for new π-conjugated semiconductors (small molecule or polymer semiconductors) compatible with polymer dielectric for high-performance devices; 2) The need for polymer dielectric (chemical structures, polarity effects, etc) compatible with commonly used microfabrication technologies for highly integrated miniaturized devices (such as inverter, oscillator, etc); 3) The need for low-voltage and high-currentdensity high-performance devices (new transistor design or high dielectric constant insulators); 4) The strategies for large-scale device fabrication with uniform performance (new fabrication methods); 5) The need for high-stability devices (atmospheric, thermal). This Research Topic aims to address the above-mentioned challenges, including one Editorial, one Review and five Original research. The following themes will provide some clues to promote progress in this area. First of all, a novel photoactive semiconductor (named as IDTOT-4F) with an A-π-D-π-A-type configuration is synthesized for optoelectrical device with photo response and optical memory behaviors provided by W. Huang et al. Then, the development of new efficient interface engineering strategies (electrode approach by W. Li et al.; interface modification by T. Li et al.) for high-performance organic thin-film transistors. In addition, new methods for the construction of high-performance and high-stability organic thin-film transistors and relevant optoelectronic applications, which could be listed in the review article by L. Huang et al. and original research in the paper of W. Wang et al. Finally, X. Ren and co-workers reported a low-temperature solution process to fabricate a high-k metal oxide dielectric for low-power OFET applications. Edited and reviewed by: Liming Dai, Case Western Reserve University, United States

Two-dimensional Perovskite Oxide High-Κ Dielectric for High-Performance Phototransistors

High- κ perovskite membranes as insulators for two-dimensional transistors

A native oxide high-kappa gate dielectric for two-dimensional electronics

Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits

Editorial: High-Performance Organic Thin-Film Transistors

A native oxide high-κ gate dielectric for two-dimensional electronics

Two-dimensional perovskite oxide as a photoactive high- κ gate dielectric

Explore of exfoliable multifunctional high-k two-dimensional oxides

High- κ monocrystalline dielectrics for low-power two-dimensional electronics

Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors

Application of Perovskite‐Structured Materials in Field‐Effect Transistors

A Low-Temperature, Solution-Processed High-K Dielectric for Low-Voltage, High-Performance Organic Field-Effect Transistors (Ofets)

Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors

Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices

Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors

High-k Polymer Materials Containing Cyclic Carbonate As Gate Dielectrics for Application in Low-Voltage Operating Organic Thin-Film Transistors

Crystalline Complex Oxide Membrane: Sub-1 nm CET Dielectrics for 2D Transistors

Scalable Integration of Hybrid High-Κ Dielectric Materials on Two-Dimensional Semiconductors

Ultrathin Van Der Waals Lanthanum Oxychloride Dielectric for 2D Field-Effect Transistors

Ultrathin Van Der Waals Lanthanum Oxychloride Dielectric for Two‐Dimensional Field‐Effect Transistors

Single-crystalline metal oxides as dielectrics for top-gate two-dimensional transistors