A high-$κ$ wide-gap layered dielectric for two-dimensional van der Waals heterostructures

A. Söll,E. Lopriore,A. K. Ottesen,J. Luxa,G. Pasquale,J. Sturala,F. Hájek,V. Jarý,D. Sedmidubský,K. Mosina,A. Kis,Z. Sofer
2023-07-25
Abstract:Van der Waals heterostructures of two-dimensional materials have opened up new frontiers in condensed matter physics, unlocking unexplored possibilities in electronic and photonic device applications. However, the investigation of wide-gap high-$\kappa$ layered dielectrics for devices based on van der Waals structures has been relatively limited. In this work, we demonstrate an easily reproducible synthesis method for the rare earth oxyhalide LaOBr, and we exfoliate it as a 2D layered material with a measured static dielectric constant of $\epsilon_{0, \perp} \simeq 9$ and a wide bandgap of 5.3 eV. Furthermore, our research demonstrates that LaOBr can be used as a high-$\kappa$ dielectric in van der Waals field-effect transistors with high performance and low interface defect concentrations. Additionally, it proves to be an attractive choice for electrical gating in excitonic devices based on 2D materials. Our work demonstrates the versatile realization and functionality of 2D systems with wide-gap and high-$\kappa$ van der Waals dielectric environments.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The paper aims to address the lack of high dielectric constant (high-κ) wide bandgap layered insulating materials in two-dimensional (2D) van der Waals heterostructures. Specifically, the research team demonstrates the synthesis method of rare-earth oxyhalide LaOBr and verifies its potential as a high-κ insulating material in high-performance 2D van der Waals field-effect transistors. The main issues the paper attempts to solve are as follows: 1. **Development of high-κ layered insulating materials**: The current high-κ insulating materials (such as Al₂O₃ and HfO₂) used in 2D material devices have dangling bonds at the interface with 2D materials, leading to degraded device performance. Therefore, there is a need to develop a new high-κ layered insulating material to overcome this challenge. 2. **Wide bandgap characteristics**: LaOBr has a wide bandgap of approximately 5.3 eV, making it an ideal insulating material for 2D field-effect transistors. The wide bandgap ensures the material's stability in various applications. 3. **Ease of exfoliation and integrability**: Large-sized and stoichiometrically precise LaOBr crystals were successfully synthesized through a high-temperature molten growth method. LaOBr is easy to exfoliate into 2D sheets and can be well integrated into van der Waals heterostructures. 4. **Low leakage current and high breakdown voltage**: LaOBr exhibits extremely low leakage current (<10⁻⁴ A cm⁻²) and high breakdown voltage (8 MV cm⁻¹), demonstrating its superior performance as a high-κ insulating material. 5. **Low interface defect concentration**: When using LaOBr as a gate insulating material, MoS₂ field-effect transistors show almost no hysteresis (<10 mV) and a low subthreshold slope (approximately 85 mV/dec), indicating a very low interface defect density between LaOBr and MoS₂. 6. **Exciton regulation**: LaOBr is also used as an encapsulation material and gate insulating material to control the exciton characteristics based on 2D materials, showcasing its potential applications in optical devices. In summary, the study verifies the feasibility of LaOBr as a high-κ insulating material in high-performance 2D van der Waals field-effect transistors through the synthesis and characterization of LaOBr crystals, providing a new solution for future 2D material-based electronic devices.