Integrated circuits in silicon carbide for high-temperature applications

Carl-Mikael Zetterling

DOI: https://doi.org/10.1557/mrs.2015.90

IF: 5

2015-05-01

MRS Bulletin

Abstract:Abstract

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

A. Mihaila,F. Udrea,S. J. Rashid,P. Godignion,P. Brosselard,D. Tournier,J. Millan,G. Amaratunga

DOI: https://doi.org/10.1109/ISPSD.2006.1666096

2006-01-01

Abstract:The continuous progress made over the past years in terms of material quality and key technological issues combined with a better understanding of the devices' physics have placed Silicon Carbide (SiC) devices in a position from where they can challenge the present day Silicon (Si) solutions in high power/high temperature applications. Since they avoid gate oxide-related problems such as channel mobility and high temperature long term reliability typical of SiC MOSFETs, SiC JFETs are attractive candidates for applications requiring high power/high temperature operation. This paper reports for the first time experimental results of a 4H-SiC normally on JFET using buried p+ gates and buried field rings (BFRs) in the termination region. The device uses a double layer epitaxial process with a novel, more highly doped buffer layer. The paper also investigates the high temperature operation (up to 300 degrees C) of the device.
An analog to digital converter in a SiC CMOS technology for high-temperature applications

Jiarui Mo,Yunfan Niu,Alexander May,Mathias Rommel,Chiara Rossi,Joost Romijn,Guoqi Zhang,Sten Vollebregt

DOI: https://doi.org/10.1063/5.0195013

IF: 4

2024-04-08

Applied Physics Letters

Abstract:Integrated circuits based on wide bandgap semiconductors are considered an attractive option for meeting the demand for high-temperature electronics. Here, we report an analog-to-digital converter fabricated in a silicon carbide complementary metal–oxide–semiconductor technology now available through Europractice. The MOSFET component in this technology was measured up to 500 °C, and the key parameters, such as threshold voltage, field-effect mobility, and channel-length modulation parameters, were extracted. A 4-bit flash data converter, consisting of 266 transistors, is implemented with this technology and demonstrates correct operation up to 400 °C. Finally, the gate oxide quality is investigated by time-dependent dielectric breakdown measurements at 500 °C. A field-acceleration factor of 4.4 dec/(MV/cm) is obtained by applying the E model.

physics, applied
Fulfilling the Promise of High-Temperature Operation with Silicon Carbide Devices: Eliminating bulky thermal-management systems with SJTs

R. Singh,S. Sundaresan

DOI: https://doi.org/10.1109/MPEL.2014.2383328

2015-03-03

IEEE Power Electronics Magazine

Abstract:Electronics operating at high temperatures are expected to revolutionize key industries in ways not yet imagined. It will allow aerospace engine applications, actuators and downhole electronics, and vehicle power systems to be squeezed into significantly smaller spaces through reduction or elimination of bulky thermal-management systems. Silicon carbide (SiC) offers great potential for the realization of high-temperature power devices because of its attractive electrical properties, such as wide bandgap, high breakdown electric field, and high thermal conductivity. However, many device structures in SiC are not suitable for use at high temperatures because they are not able to fully exploit these properties to deliver lowleakage currents and superior long-term reliability. In contrast, SiC junction transistors (SJTs) and optimized junction barrier Schottky (JBS) rectifiers have now been demonstrated with superior high-temperature performance due to their intrinsic advantages stemming from these device structures. This article surveys important physical phenomenon that limit high-temperature operation of SiC power devices, and presents experimental results from GeneSiC of higher temperature SiC power device operation.

Engineering,Materials Science
Integrated sensor and electronic circuits in fully depleted SOI technology for high-temperature applications

Laurent Demeûs,Vincent Dessard,Alberto Viviani,Stéphane Adriaensen,Denis Flandre,L. Demeus,V. Dessard,A. Viviani,S. Adriaensen,D. Flandre

DOI: https://doi.org/10.1109/41.915405

IF: 7.7

2001-04-01

IEEE Transactions on Industrial Electronics

Abstract:The electrical characteristics of devices and circuits realized in CMOS technology on silicon-on-insulator (SOI) substrates and operated at elevated temperatures are presented and compared with results obtained using other materials (bulk Si, GaAs, SiC). It is demonstrated that fully depleted CMOS on SOI is the most suitable process for the realization of complex electronic circuits to be operated in high-temperature environments, up to more than 300°C.

automation & control systems,engineering, electrical & electronic,instruments & instrumentation
Status of Silicon Carbide Micromachining, Circuits and Sensing Devices

Wei Tang,Haixia Zhang

DOI: https://doi.org/10.2174/1874464811104030191

2011-01-01

Recent Patents on Materials Science

Abstract:Silicon carbide (SiC) is an attractive material for high-temperature, high-power, high-frequency applications, due to its outstanding electrical, mechanical properties, and chemical inertness. SiC semiconductor technology has been developed widely since the commercialization of 6H-SiC and 4H-SiC bulk SiC wafers in 1990s. This paper reviews the recent patents on SiC semiconductor technology, introduces the achievements both in academy and industry for micro- machining technology, circuit, devices. All these developments are driving high-performance SiC devices into harsh envi- ronment applications.
Silicon carbide MEMS for harsh environments

M. Mehregany,C.A. Zorman,N. Rajan,Chien Hung Wu

DOI: https://doi.org/10.1109/5.704265

IF: 20.6

1998-01-01

Proceedings of the IEEE

Abstract:Silicon carbide (SiC) is a promising material for the development of high-temperature solid-state electronics and transducers, owing to its excellent electrical, mechanical, and chemical properties. This paper is a review of silicon carbide for microelectromechanical systems (SiC MEMS). Current efforts in developing SiC MEMS to extend the silicon-based MEMS technology to applications in harsh environments are discussed. A summary is presented of the material properties that make SiC an attractive material for use in such environments. Challenges faced in the development of processing techniques are also outlined. Last, a review of the current stare of SiC MEMS devices and issues facing future progress are presented.

engineering, electrical & electronic
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

J.B. Casady,R.W. Johnson

DOI: https://doi.org/10.1016/0038-1101(96)00045-7

1996-10-01

Abstract:Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm−1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm−2 order of magnitude in 1992 to 3.5 cm−2 at the research level in 1995.

physics, condensed matter, applied,engineering, electrical & electronic
Bidirectional Current 4h‐sic VJFET

P. Brosselard,D. Tournier,A. Mihaila,F. Udrea,S. J. Rashid,P. Godignon,G. Amaratunga,J. Millan

DOI: https://doi.org/10.1002/pssc.200674113

2007-01-01

Abstract:Silicon Carbide is an attractive material to develop new generation of power devices due to its outstanding physical and thermal properties. Due to the NET performances, the reverse mode shows a great interest for power applications particularly concerning bidirectional current capability. Besides, the device temperature behaviour has been characterised up to 300 degrees C. We have observed excellent temperature performances in the reverse and forward conduction modes since R-on only shows a x5 and x4 increase, respectively, from 30 degrees C to 300 degrees C. In blocking mode, the leakage current is below the nA range at room temperature and rises the mu A range at 300 degrees C, remaining very low compared to Si devices. In conclusion, one may state that the SiC NET is a suitable switch for high temperature power applications, showing bidirectional current capability. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology

Jiarui Mo,Jinglin Li,Alexander May,Mathias Rommel,Sten Vollebregt,Guoqi Zhang

DOI: https://doi.org/10.1109/ted.2024.3450828

IF: 3.1

2024-09-28

IEEE Transactions on Electron Devices

Abstract:The demand for accurate temperature sensing in extreme temperatures is increasing. Traditional silicon-based integrated temperature sensors usually cannot survive above 200 °C. Many researchers have started to focus on semiconductors with a large bandgap. Among them, silicon carbide (SiC) is the most promising one. Nevertheless, most reported SiC sensors are in the form of discrete components and are not compatible with integrated electronics. In this work, we demonstrate an open 4H-SiC CMOS technology, and the fabrication steps are detailed. The temperature sensing elements in this technology, including resistors based on different implanted layers and MOSFETs, are characterized up to 600 °C. At room temperature, the resistive-based elements demonstrate large negative temperature coefficients of resistance (TCRs). With increasing temperature, the TCR starts to decrease and even becomes positive. The TCR change is due to the interplay between increasing dopant ionization rate and decreasing mobility as a function of temperature. The resistance change with temperature fits well into the Steinhart-Hart model and second-order polynomial equation. The p-type diode-connected MOSFET has a sensitivity of 4.35 mV/°C with a good linearity. The nMOS-based sensor has a maximum sensitivity of −9.24 mV/°C but a compromised linearity. The characterization of these sensing elements provides important results for potential users who will work on SiC integrated temperature sensing with this technology.

engineering, electrical & electronic,physics, applied
One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Shanliang Chen,Weijun Li,Xiaoxiao Li,Weiyou Yang

DOI: https://doi.org/10.1016/j.pmatsci.2019.04.004

2019-01-01

Abstract:Silicon carbide (SiC) is recognized as one of the shining stars of third generation semiconductors, because of its preeminent characteristics, for instance, outstanding mechanical behavior, exceptional chemical inertness, high thermal stability, and high thermal conductivity, which represent its unique advantage and importance to be serviced under high-power/high-temperature/high-voltage harsh environments. In this review, we firstly present a comprehensive overview on the designed growth of one-dimensional (1D) SiC nanostructures in fruitful morphologies with tailored doping, followed by a detailed discussion to highlight a range of intriguing properties. Subsequently, the state-of-the-art research activities regarding their extensive applications are systematically summarized, including field emitters, supercapacitors, field-effect transistors, photocatalysts, pressure sensors, microwave absorption, superhydrophobic coating, and so forth. Finally, the future prospects and research directions of 1D SiC nanostructures are proposed.
Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Joost Romijn,Sten Vollebregt,Luke M. Middelburg,Brahim El Mansouri,Henk W. van Zeijl,Alexander May,Tobias Erlbacher,Guoqi Zhang,Pasqualina M. Sarro

DOI: https://doi.org/10.1109/ted.2021.3125279

IF: 3.1

2022-01-01

IEEE Transactions on Electron Devices

Abstract:The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.

engineering, electrical & electronic,physics, applied
A high temperature de-saturation protection and under voltage lock out circuit for SiC MOSFET

feng qi,longya xu,bo zhao,zhe zhou

DOI: https://doi.org/10.1109/ecce.2015.7310524

2015-01-01

Abstract:SiC devices have a great potential to work in high temperature (HT) environment. To protect SiC MOSFET in HT environment, this paper presents a de-saturation protection and under voltage lock out circuit using commercially available discrete transistors rated at 200 degrees C. A discussion on integrated circuit (IC) solution and discrete circuit solution is presented to evaluate feasibility and benefit to design such a multifunctional circuit with discrete components. The prototype circuit is designed, built and tested in a thermal chamber of 180 degrees C. To discuss the circuit operation principles in details, the circuit schematic is analyzed in functional blocks. To validate the circuit performance, experimental test is conducted at both room and high temperature conditions. No problem is found during accumulative 25 hours thermal chamber test at 180 degrees C.
Design Criteria of High-Temperature Integrated Circuits Using Standard SOI CMOS Process up to 300°C

Christian Sbrana,Alessandro Catania,Maksym Paliy,Stefano Di Pascoli,Sebastiano Strangio,Massimo Macucci,Giuseppe Iannaccone

DOI: https://doi.org/10.1109/access.2024.3387714

IF: 3.9

2024-04-27

IEEE Access

Abstract:In this paper, we discuss the challenges at the device and circuit level that must be addressed to design reliable silicon CMOS integrated circuits operating in high-temperature environments. We present experimental results on representative devices fabricated with a 180 nm CMOS SOI platform, which have been characterized up to 300°C, discuss issues arising at high temperature, and propose possible solutions. A BJT-based temperature sensor core is also described and evaluated across the same extended temperature range. We also propose and discuss design criteria optimized for a wide range of operating temperature. A sufficient on/off current ratio can be achieved by taking advantage of the isolation provided by low-leakage CMOS SOI process, while operation at low current density must be ensured to mitigate electromigration effects. Within these conditions, low-power precise sensing circuits can be effectively implemented with operating temperature up to 300°C, that are extremely relevant for industrial, mobility, and space applications.

computer science, information systems,telecommunications,engineering, electrical & electronic
Silicon Carbide: Material Growth, Device Processing, and Applications

Marilena Vivona,Mike Jennings

DOI: https://doi.org/10.3390/ma17184571

IF: 3.4

2024-09-19

Materials

Abstract:The continuous demand for electronic devices operating at increasing current and power levels, as well as at high temperatures and in harsh environments, has driven research into wide-band gap (WBG) semiconductors over the last three decades [...]

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
A High Temperature Gate Drive Circuit for SiC MOSFET

Qi Feng,Xu Longya,Wang Jiangbo,Zhao Bo,Zhou Zhe

2015-01-01

Abstract:The outstanding semiconductor properties of SiC material,e.g.wide bandgap,high critical electric field,high saturation velocity,and thermal conductivity,promise the SiC device a new generation power electronics element with higher speed,higher voltage and,higher temperature operation potential than the silicon device.To fulfill the high temperature operation requirements from SiC device,the gate drive circuit should be designed with high temperature operation capability.This paper reviews contemporary high temperature gate drive design approaches and proposes a high temperature gate drive circuit based on transformer isolation and commercially available silicon discrete components.Performance of the designed circuit is evaluated by both computer simulations and high temperature experimental tests.
Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Liangchun C. Yu,Greg T. Dunne,Kevin S. Matocha,Kin P. Cheung,John S. Suehle,Kuang Sheng

DOI: https://doi.org/10.1109/tdmr.2010.2077295

IF: 1.886

2010-01-01

IEEE Transactions on Device and Materials Reliability

Abstract:The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for applications where high temperature is required. The metal-oxide-semiconductor (MOS)-controlled power devices are the most favorable structure; however, it is widely believed that silicon oxide on SiC is physically limited, particularly at high temperatures. Therefore, experimental measurements of long-term reliability of oxide at high temperatures are necessary. In this paper, time-dependent dielectric-breakdown measurements are performed on state-of-the-art 4H-SiC MOS capacitors and double-implanted MOS field-effect transistors (DMOSFET) with stress temperatures between 225°C and 375°C and stress electric fields between 6 and 10 MV/cm. The field-acceleration factor is around 1.5 dec/(MV/cm) for all of the temperatures. The thermal activation energy is found to be ~ 0.9 eV, independent of the electric field. The area dependence of Weibull slope is discussed and shown to be a possible indication that the oxide quality has not reached the intrinsic regime and further oxide-reliability improvements are possible. Since our reliability data contradict the widely accepted belief that silicon oxide on SiC is fundamentally limited by its smaller conduction-band offset compared with Si, a detailed discussion is provided to examine the arguments of the early predictions.
High-quality amorphous Silicon Carbide for hybrid photonic integration at low temperature

Bruno Lopez-Rodriguez,Roald Van Der Kolk,Samarth Aggarwal,Naresh Sharma,Zizheng Li,Daniel Van Der Plaats,Thomas Scholte,Jin Chang,Silvania F. Pereira,Simon Groeblacher,Harish Bhaskaran,Iman Esmaeil Zadeh Zadeh

2023-06-07

Abstract:Integrated photonic platforms have proliferated in recent years, each demonstrating its own unique strengths and shortcomings. However, given the processing incompatibilities of different platforms, a formidable challenge in the field of integrated photonics still remains for combining the strength of different optical materials in one hybrid integrated platform. Silicon carbide is a material of great interest because of its high refractive index, strong second and third-order non-linearities and broad transparecy window in the visible and near infrared. However, integrating SiC has been difficult, and current approaches rely on transfer bonding techniques, that are time consuming, expensive and lacking precision in layer thickness. Here, we demonstrate high index Amorphous Silicon Carbide (a-SiC) films deposited at 150$^{\circ}$C and verify the high performance of the platform by fabricating standard photonic waveguides and ring resonators. The intrinsic quality factors of single-mode ring resonators were in the range of $Q_{int} = (4.7-5.7)\times10^5$ corresponding to optical losses between 0.78-1.06 dB/cm. We then demonstrate the potential of this platform for future heterogeneous integration with ultralow loss thin SiN and LiNbO$_3$ platforms.

Optics,Applied Physics
Flexible High-Temperature MoS 2 Field-Effect Transistors and Logic Gates

Yixuan Zou,Peng Li,Caizhen Su,Jiawen Yan,Haojie Zhao,Zekun Zhang,Zheng You

DOI: https://doi.org/10.1021/acsnano.3c13220

IF: 17.1

2024-03-16

ACS Nano

Abstract:High-temperature-resistant integrated circuits with excellent flexibility, a high integration level (nanoscale transistors), and low power consumption are highly desired in many fields, including aerospace. Compared with conventional SiC high-temperature transistors, transistors based on two-dimensional (2D) MoS(2) have advantages of superb flexibility, atomic scale, and ultralow power consumption. However, MoS(2) cannot survive at high temperature and drastically degrades above 200 °C. Here, we...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Materials for high-temperature digital electronics

Dhiren K. Pradhan,David C. Moore,A. Matt Francis,Jacob Kupernik,W. Joshua Kennedy,Nicholas R. Glavin,Roy H. Olsson III,Deep Jariwala

DOI: https://doi.org/10.1038/s41578-024-00731-9

IF: 83.5

2024-10-19

Nature Reviews Materials

Abstract:Silicon microelectronics, consisting of complementary metal–oxide–semiconductor technology, have changed nearly all aspects of human life from communication to transportation, entertainment and health care. Despite their widespread and mainstream use, current silicon-based devices are unreliable at temperatures exceeding 125 °C. The emergent technological frontiers of space exploration, geothermal energy harvesting, nuclear energy, unmanned avionic systems and autonomous driving will rely on control systems, sensors and communication devices that operate at temperatures as high as 500 °C and beyond. At these extreme temperatures, active (heat exchanger and phase-change cooling) or passive (fins and thermal interface materials) cooling strategies add considerable mass and complicate the systems, which is often infeasible. Thus, new material solutions beyond conventional silicon complementary metal–oxide–semiconductor devices are necessary for high-temperature, resilient electronic systems. The ultimate realization of high-temperature electronic systems requires united efforts to develop, integrate and ultimately manufacture non-silicon-based logic and memory technologies, non-traditional metals for interconnects and ceramic packaging technology.

materials science, multidisciplinary,nanoscience & nanotechnology
Review of Die-Attach Materials for SiC High-Temperature Packaging

Fengze Hou,Zhanxing Sun,Meiying Su,Jiajie Fan,Xiangan You,Jun Li,Qidong Wang,Liqiang Cao,Guoqi Zhang

DOI: https://doi.org/10.1109/tpel.2024.3417529

IF: 5.967

2024-09-02

IEEE Transactions on Power Electronics

Abstract:Silicon carbide (SiC) devices have shown definite advantages over Si counterparts in high-temperature, high-voltage, and high-frequency applications. To fully exploit the potentiality of SiC devices in high temperatures, die-attach materials that can withstand high temperatures for a long time are required in the power electronics packaging. In this article, the high-temperature die-attach materials, such as high-temperature solders and transient liquid-phase bonding materials, were reviewed first. Then, metallic (mainly Ag and Cu) nanoparticles (NPs) sintering technologies were thoroughly overviewed. The metallic NPs sintering materials, metallic NPs sintering process, and interface and reliability were analyzed, respectively. Finally, the challenges and outlook of promising Cu NPs sintering technology were discussed.

engineering, electrical & electronic

Integrated circuits in silicon carbide for high-temperature applications

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

An analog to digital converter in a SiC CMOS technology for high-temperature applications

Fulfilling the Promise of High-Temperature Operation with Silicon Carbide Devices: Eliminating bulky thermal-management systems with SJTs

Integrated sensor and electronic circuits in fully depleted SOI technology for high-temperature applications

Status of Silicon Carbide Micromachining, Circuits and Sensing Devices

Silicon carbide MEMS for harsh environments

Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

Bidirectional Current 4h‐sic VJFET

Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

A high temperature de-saturation protection and under voltage lock out circuit for SiC MOSFET

Design Criteria of High-Temperature Integrated Circuits Using Standard SOI CMOS Process up to 300°C

Silicon Carbide: Material Growth, Device Processing, and Applications

A High Temperature Gate Drive Circuit for SiC MOSFET

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

High-quality amorphous Silicon Carbide for hybrid photonic integration at low temperature

Flexible High-Temperature MoS 2 Field-Effect Transistors and Logic Gates

Materials for high-temperature digital electronics

Review of Die-Attach Materials for SiC High-Temperature Packaging