Charge Trapping Layer Enabled Normally-Off $\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ MOSFET

Minghao He,Kangyao Wen,Chenkai Deng,Mujun Li,Yifan Cui,Qing Wang,Hongyu Yu,Kah-Wee Ang

DOI: https://doi.org/10.1109/ted.2023.3267758

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:In this work, a normally-OFF $eta $ -Ga2O3 MOSFET enabled by charge trapping layer (CTL) is demonstrated for the first time. The CTL consists of Al:HfO $_{x} 1$ :5 and the tunneling barrier (TB) is Al2O3/HfOx/Al2O3 stack. The developed Ga2O3 MOSFET exhibits a wide ${V}_{ ext {th}}$ tuning range to normally-OFF operation and a long-lasting retention characteristic of −0.3 V (ten years). The device obtains a breakdown voltage (BV) of 1815 V, showing high reverse blocking capability based on the proposed CTL technique. ${I}$ – ${V}$ and ${C}$ – ${V}$ analyses are carried out under various temperatures to study the mechanism and explore the charge trapping and de-trapping processes. The results indicate a promising method to achieve E-mode operation for Ga2O3 MOSFET with low charge loss and stable ${V}_{ ext {th}}$ .

engineering, electrical & electronic,physics, applied