Abstract:In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance. However, SJ MOSFET will turn on the parasitic diodes due to fast reverse recovery, further inducing severe oscillation in the reverse recovery of the device and the corresponding adverse effect on the circuit. In this study, a fast recovery vertical superjunction (SJ) MOSFET with n-Si and p-3C-SiC pillars was studied. Unlike other structures, such as the 4H-SiC superjunction UMOSFET with a heterojunction diode or the ultra-low recovery charge cell-distributed Schottky contacts SJ-MOSFET with integrated isolated NMOS, we introduce a Schottky barrier diode (SBD) on the source contact at the top of the n-Si pillar in the SJ-MOSFET to improve the device reverse recovery. The simulation software TCAD Silvaco was utilized to simulate the device properties. Compared with the conventional Si SJ, the proposed Si/SiC SJ with the Schottky barrier diode (SBD) connected demonstrated a lower reverse recovery charge, which was reduced by 90.5%, respectively. The waveform of the reverse recovery current demonstrates that the electrons in the device are withdrawn from SBD during reverse recovery, preventing the opening of the parasitic diode in the SJ MOSFET. Finally, another structure is illustrated to decrease the gate capacitance by introducing a thin p-base layer between the gate metal and N-Si pillar so that it can improve the switching characteristics of devices. The open-loss and off-loss of the improved device were reduced by 33% and 42.3%, respectively.

Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics

Integrated Junction Barrier Schottky Diode and MOS-Channel Diode in SiC Planar MOSFETs for Optimization of Reverse Performances

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance

4H-SiC Trench MOSFET with Integrated Heterojunction Diode for Optimizing Switching Performance

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate

A Novel SiC MOSFET With Embedded Auto-Adjust JFET With Improved Short Circuit Performance

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars

A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

A novel high-performance junctionless 4H-SiC trench MOSFET with improved switching characteristics