Abstract:Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

Large Out-of-plane Piezoelectric Response and Ultra-Low Polarization Transition Barriers in Two-Dimensional MoGe2N4/MoSi2N4 Heterostructures

Enhanced Piezoelectric Response of Layered In 2 Se 3 /MoS 2 Nanosheet-Based van der Waals Heterostructures

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

A van der Waals pn heterojunction with organic/inorganic semiconductors

Tunable electronic properties and optoelectronic characteristics of MoGe2N4 /SiC van der Waals heterostructure

Effect of Vertical Strain and In-Plane Biaxial Strain on Type-Ii MoSi2N4/Cs3Bi2I9 Van Der Waals Heterostructure

Enhanced Piezoelectric Effect in MoS2 and Surface-Engineered GaN Bilayer

Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures

Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

Two-Dimensional Electron Gas in MoSi2N4/VSi2N4 Heterojunction by First Principles Calculation

Two-dimensional electron gas in MoSi<sub>2</sub>N<sub>4</sub>/VSi<sub>2</sub>N<sub>4</sub> heterojunction from first principles

First-principles calculation of in-plane and out-of-plane piezoelectric properties of two-dimensional Janus MoSSiX 2 (X = N, P, As) monolayers

Polarization discontinuity driven two dimensional electron gas at A$_2$Mo$_3$O$_8$/B$_2$Mo$_3$O$_8$ (A, B : Zn,Mg,Cd) interfaces

Enhanced piezoelectricity and electronic band structure transition assisted by atomic shift in MoS2 monolayer

Coexistence of large out-of-plane and in-plane piezoelectricity in 2D monolayer Li-based ternary chalcogenides LiMX2

First-principles insights of electronic properties of Blue Phosphorus/MoSi2N4 van der Waals heterostructure via vertical electric field and biaxial strain

Exploring the Valleytronic, Optical, and Piezoelectric Properties of Janus MoBXY2 (X = N, P; Y = S, Se, Te) Monolayers for Multifunctional Applications

Twisted angle modulated structural property, electronic structure and carrier transport of MoS2/AlN(0001) mixed-dimensional van der Waals heterostructure

Engineering the band structure of type-II MoSe2/WSe2 van der Waals heterostructure by electric field and twist angle: A firstprinciples perspective

Optical and tuning electronic properties of GeC/MoS2 van der Waals heterostructures by electric field and strain: A first-principles study