Enhanced Piezoelectric Effect in MoS2 and Surface-Engineered GaN Bilayer

Xinxin Wang,Wenyu Shi,Jianguo Wan
DOI: https://doi.org/10.1063/5.0055321
IF: 2.877
2021-01-01
Journal of Applied Physics
Abstract:The piezoelectric effect of MoS2 and surface-engineered GaN bilayers is systematically investigated using the density functional perturbation theory based on first-principles calculations. The results show that the piezoelectric coefficients increased in the stacking with same polarization orientation between MoS2 and of surface-engineered GaN monolayers. We further find that the increment extent is also affected by different stacking configurations. Furthermore, the uniaxial and normal strains can effectively modulate the piezoelectric coefficients in a reasonable range. Such variations can be revealed by analyzing the charge distribution at different strain states. Our results show that MoS2 and surface-engineered GaN bilayers have potential applications in nanosensors and piezotronics.
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