Abstract:The recently experimentally synthesized monolayer <math>MoSi2N4</math> and <math>WSi2N4</math> (Science 369, 670–674 (2020)) lack inversion symmetry, which allows them to become piezoelectric. In this work, based on ab initio calculations, we report structure effect on intrinsic piezoelectricity in septuple-atomic-layer <math>MSi2N4</math> (M=Mo and W), and six structures (<math>αi</math> (i=1 to 6)) are considered with the same space group. These structures can connect to each other through translation, mirror and rotation operations of double layer unit <math>Si2N2</math>. It is found that <math>MSi2N4</math> (M=Mo and W) with <math>αi</math> (i = 1 to 6) all are indirect band gap semiconductors. Calculated results show that <math>MoSi2N4</math> and <math>WSi2N4</math> monolayers have the same structural dependence on piezoelectric strain and stress coefficients (<math>d11</math> and <math>e11</math>), together with the ionic and electronic contributions to <math>e11</math>. The <math>α5</math> phase has largest <math>d11</math> for both <math>MoSi2N4</math> and <math>WSi2N4</math>, which are larger than 2.9 pm/V. Finally, we investigate the intrinsic piezoelectricity of monolayer <math>MA2Z4</math> (M=Cr, Mo and W; A=Si and Ge; Z=N and P) with<math>α1</math> and <math>α2</math> phases expect <math>CrGe2N4</math>, because they all are semiconductors and their enthalpies of formation between <math>α1</math> and <math>α2</math> phases are very close. The most important result is that monolayer <math>MA2Z4</math> containing P atom have more stronger piezoelectric polarization than one including N atom. The largest <math>d11</math> among <math>MA2N4</math> materials is 1.85 pm/V, which is close to the smallest <math>d11</math> of 1.65 pm/V in <math>MA2P4</math> monolayers. For <math>MA2P4</math>, the largest <math>d11</math> is up to 6.12 pm/V. Among the 22 monolayers, <math>α1</math>-<math>CrSi2P4,α1</math>-<math>MoSi2P4,α1</math>-<math>CrGe2P4,α1</math>-<math>MoGe2P4</math> and <math>α2</math>-<math>CrGe2P4</math> have large <math>d11</math>, which are greater than or close to 5 pm/V, a typical value for bulk piezoelectric materials. These materials are recommended for experimental exploration. Our study reveals that the <math>MA2Z4</math> family have the potential applications in piezoelectric field.

Giant Piezoelectricity of Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe, and GeS

Giant piezoelectricity in group IV monochalcogenides with ferroelectric AA layer stacking

Piezoelectricity in Two-Dimensional Group III Monochalcogenides

The High Piezoelectricity, Flexibility and Electronic Properties of New Janus ZnXY2 (X = Ge, Sn, Si and Y = S, Se, Te) Monolayers: A First-Principles Research

Giant Piezoelectricity of Janus M₂SeX (M = Ge, Sn; X = S, Te) Monolayers

Piezoelectricity and Dipolar Polarization of Group V-IV-III-VI Sheets: A First-Principles Study

Giant Piezoelectricity of Janus M2SeX (M = Ge, Sn; X = S, Te) Monolayers

Giant Piezoelectricity in Antiferromagnetic CrS₂ and CrSe₂ Monolayers

Giant Piezoelectricity in Antiferromagnetic CrS2 and CrSe2 Monolayers

Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers

Electronic, Elastic and Piezoelectric Properties of Two-Dimensional Group-IV Buckled Monolayers

Intrinsic Coupling Between Piezoelectric and Electronic Transport Properties in Janus Γ-Gesnxo (X = S, Se) Monolayers with Vertical Piezoelectricity

Structure Effect on Intrinsic Piezoelectricity in Septuple-Atomic-layer MSi2N4 (m=mo and W)

Structure effect on intrinsic piezoelectricity in septuple-atomic-layer MSi 2 N 4 (M=Mo and W)

Coexistence of large out-of-plane and in-plane piezoelectricity in 2D monolayer Li-based ternary chalcogenides LiMX2

Intrinsically Asymmetric Atomic Character Regulates Piezoelectricity in Two-Dimensional Materials

Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides

Peculiar Piezoelectric Properties of Soft Two-Dimensional Materials

High Piezoelectricity Janus GaXI (X = S, Se, or Te): First-principles Calculations

Piezoelectricity of Janus group-III monochalcogenide monolayers, multilayers and their vdW heterostructures: insight from first-principles calculations

Piezo-phototronic solar cell based on 2D monochalcogenides materials