Giant Piezoelectricity of Janus M2SeX (M = Ge, Sn; X = S, Te) Monolayers

Jian Qiu,Fusheng Zhang,Hui Li,Xianping Chen,Bao Zhu,Haojie Guo,Zhaogui Ding,Jiading Bao,Jiabing Yu

DOI: https://doi.org/10.1109/led.2021.3056886

IF: 4.8157

2021-04-01

IEEE Electron Device Letters

Abstract:It is found that many two-dimensional materials are easy to obtain out-of-plane piezoelectric properties because of their Janus structure. Here, based on the monolayer GeSe and SnSe, we study the electronic structure and piezoelectricity of the Janus M₂SeX (M=Ge, Sn; X=S, Te) monolayers. Due to the lack of inversion symmetry and mirror symmetry, as well as flexible mechanical properties, the 2D Janus M₂SeX monolayers have large in-plane piezoelectric coefficients d₁₁ (up to 345.08pm/V) and out-of-plane piezoelectric coefficients d₃₁ (up to 3.83pm/V). All energy band structures of two-dimensional (2D) Janus M₂SeX monolayers show indirect bandgap and Zeeman-type spin splitting after considering spin orbit coupling (SOC). The lack of mirror symmetry leads to out-of-plane spin polarization. In addition, the calculation based on the deformation potential theory shows that the 2D Janus M₂SeX monolayers have high carrier mobility. The large piezoelectric properties and high carrier mobility show the application potential of 2D Janus M₂SeX monolayers in flexible electronic devices and piezoelectric devices.

engineering, electrical & electronic

What problem does this paper attempt to address?

The paper aims to study the piezoelectric properties and electronic structure of two-dimensional (2D) Janus M₂SeX (M=Ge, Sn; X=S, Te) monolayer materials. Specifically, the paper addresses the following key issues:

1. **Piezoelectric Properties**:
- Investigated the large in-plane piezoelectric coefficient (d₁₁) and vertical piezoelectric coefficient (d₃₁) exhibited by these materials due to the presence of non-centrosymmetry and band gaps.
- Found that these materials have very high in-plane piezoelectric coefficients (up to 345.08 pm/V), far exceeding other 2D piezoelectric materials, and also possess significant vertical piezoelectric coefficients (up to 3.83 pm/V).

2. **Electronic Structure**:
- Calculated the band structures of these materials and discovered that, after considering spin-orbit coupling (SOC) effects, the bands exhibit indirect band gaps and spin splitting similar to the Zeeman effect.
- The lack of mirror symmetry leads to vertical spin polarization.

3. **Carrier Mobility**:
- Calculated the carrier mobility of these materials using deformation potential theory and found that they have very high electron and hole mobilities.
- High mobility indicates the potential application of these materials in electronic devices.

Through these studies, the paper demonstrates the potential application value of 2D Janus M₂SeX monolayer materials in flexible electronic devices and piezoelectric devices.