Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Design of 16-Wavelength Heterogeneous Quantum Dot Laser Arrays with Varying Silicon Waveguide Width and Grating Period

Heterogeneously Integrated Iii-V/Silicon Dual-Mode Distributed Feedback Laser Array for Terahertz Generation

Tunable Quantum Dot Lasers Grown Directly on Silicon

Focused Ion Beam Lithography of Multiperiod Gratings for A Wavelength-Division-Multiplexed Transmitter Laser Array

High performance distributed feedback quantum dot lasers with laterally coupled dielectric grating

Monolithically Integrated 8 × 8 Transmitter-Router Based on Tunable V-Cavity Laser Array and Cyclic Arrayed Waveguide Grating Router

Eight-wavelength distributed-Bragg-reflector (DBR) laser array transmitter for WDM applications

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays

4-Λ InGaAsP-Si Distributed Feedback Evanescent Lasers with Varying Silicon Waveguide Width.

High-channel-count 20 GHz passively mode locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity

Semiconductor waveguide quantum well lasers

1.3 Μm 10-Wavelength Laterally Coupled Distributed Feedback Laser Array with High-Duty-Ratio Gratings

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Ultra-compact arrayed waveguide grating triplexer based on silicon-on-insulator platform

Birefringence compensated silicon nanowire arrayed waveguide grating for CWDM optical interconnects.

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Design and fabrication of 1 × 32 silica-based arrayed waveguide grating

Tunable V-Cavity Lasers Integrated with a Cyclic Echelle Grating for Distributed Routing Networks

Multiple-beam colloidal quantum dot lasers in a waveguide-grating-waveguide microcavity

Silica-Based Arrayed Waveguide Grating With Flattened Spectral Response Using A Multimode Interference Coupler