Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Semiconductor waveguide quantum well lasers

Photonic integrated circuits fabricated using quantum well intermixing

Quantum well-based waveguide for semiconductor lasers

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Photonic-integrated circuits and components using quantum well intermixing

Transparent Waveguides for WDM Transmitter Arrays Using Quantum Well Shape Modification

Tunable Quantum Dot Lasers Grown Directly on Silicon

Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Novel Semiconductor Lasers and Integrated Photonic Devices

C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities

Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator

High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Erbium emitters in commercially fabricated nanophotonic silicon waveguides

Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-Q microresonators

Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-$Q$ microresonators

Monolithic integration of embedded III-V lasers on SOI

Monolithic on-chip integration of semiconductor waveguides, beamsplitters and single-photon sources

Laser soliton microcombs on silicon