Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator

Tunable Quantum Dot Lasers Grown Directly on Silicon

High-performance InAs/GaAs Quantum-Dot Laser Didoes Monolithically Grown on Silicon for Silicon Photonics

Quantum Dot Lasers on Silicon by Direct Epitaxial Growth

Photonic integrated circuits fabricated using quantum well intermixing

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Silicon-based III-V Quantum Dot Devices for Silicon Photonics

Monolithic integration of embedded III-V lasers on SOI

InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Selectively Grown III-V Lasers for Integrated Si-Photonics

On-Chip Lasers for Silicon Photonics

Long Lifetime Quantum-Dot Laser Monolithically Grown on Silicon

InAs/GaAs Quantum Dot Lasers Monolithically Integrated on Group IV Platform

Buried InGaAs/InP quantum wells selectively grown on SOI for lateral membrane laser diodes

Quantum Dot Lasers and Integrated Guided-Wave Devices Monolithically Grown on Si

Photonic-integrated circuits and components using quantum well intermixing

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Silicon Photonic Devices for Scalable Quantum Information Applications