Abstract:Analog ferroelectric memory based on Hf0.5Zr0.5O2 operating down to 4K is reported. Below 100K, devices support high amplitude pulses, yielding record Pr of 75 μC/cm2 with memory window of 6‐8V. Devices show endurance exceeding 109 cycles at cryogenic temperatures. At least 20 analog states below 100 K with ideal linearity show potential of analog cryogenic memories, essential for in‐memory‐computing. Low‐power nonvolatile memories operating down to deep cryogenic temperatures are important for a large spectrum of applications from high‐performance computing, electronics interfacing quantum computing hardware to space‐based electronics. Despite the potential of Hf0.5Zr0.5O2 (HZO), thanks to its compatibility with complementary metal‐oxide‐semiconductor (CMOS) back‐end‐of‐line processing, only few studies of HZO‐based memory devices down to cryogenic operation temperatures exist. Here, analog ferroelectric memory stack fabrication with 10 nm HZO and their detailed characterization under wide range of pulse amplitudes and frequencies down to 4 K are reported. When operated at temperatures below 100 K, HZO devices can support high amplitude voltage pulses, yielding record high Pr of up to 75μC cm−2 at ±7 Vp (14 Vpp) pulse amplitudes accompanied with frequency‐dependent memory window between 6 and 8 V. Devices show excellent endurance exceeding 109 cycles of ±5 Vp (10 Vpp) and Pr of 30 μC cm−2 without significant degradation of coercive voltages or loss of polarization at cryogenic temperatures. At least 20 reproducible analog states for temperatures below 100 K with almost ideal linearity of intermediate polarization states in both pulse directions is observed, demonstrating the high potential of analog cryogenic ferroelectric memories, essential for on‐line training in in‐memory‐computing architecture.

Enhanced Endurance and Stability of FDSOI Ferroelectric FETs at Cryogenic Temperatures for Advanced Memory Applications

Modeling and Benchmarking 5nm Ferroelectric FinFET from Room Temperature down to Cryogenic Temperatures

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

HAO $+$ Al $_{\text{2}}$ O $_{\text{3}}$ FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements.

Ferroelectric HfO 2 Memory Transistors With High- κ Interfacial Layer and Write Endurance Exceeding 10 10 Cycles

Performance Improvement of Hf0.45Zr0.55O X Ferroelectric Field Effect Transistor Memory with Ultrathin Al-O Bonds-Modified InO X Channels

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO 2 -Based Ferroelectric Field-Effect Transistors

Cryogenic HfO ₓ -Based Resistive Memory with a Thermal Enhancement Capping Layer

Hf0.5Zr0.5O2-Based Ferroelectric Field-Effect Transistors With HfO2 Seed Layers for Radiation-Hard Nonvolatile Memory Applications

MoS2-based Ferroelectric Field-Effect Transistor with Atomic Layer Deposited Hf0.5Zr0.5O2 Films Toward Memory Applications

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Ferroelectric HfO$_2$ Memory Transistors with High-$κ$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET with IGZO Channel Utilizing Postdeposition Annealing