Abstract:In this article, a novel fan-out panel-level printed circuit board (PCB)-embedded package for phase-leg silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module is presented. Electro-thermo-mechanical co-design was conducted, and the maximum package parasitic inductance was found to be about 1.24 nH at 100 kHz. Compared with wire-bonded packages, the parasitic inductances of the PCB-embedded package decreased at least by 87.6%. Compared with blind via structure, the thermal resistance of the proposed blind block structure reduced at most by about 26%, and the stress of the SiC MOSFETs decreased by about 45.2%. Then, a novel PCB-embedded packaging process was developed, and three key packaging processes were analyzed. Furthermore, effect of PCB-embedded package on static characterization of SiC MOSFET was analyzed, and it was found that: 1) Output current of PCB-embedded package was decreased under a certain gate-source voltage compared to SiC die; 2) Miller capacitance of SiC MOSFET was increased thanks to parasitic capacitance induced by package; and 3) compared with SiC die, nonflat miller plateau of the PCB-embedded package extends, and as drain-source voltage increases, the nonflat miller plateau extends. Lastly, switching characteristics of the PCB-embedded package and TO-247 package were compared. The results show that the PCB-embedded package has smaller parasitic inductances.

Compact Spatially Symmetric Double-Sided Embedded Packaging Method for Parallel SiC MOSFETs

A Solution to Press-Pack Packaging of SiC MOSFETS

Design and evaluation of press-pack SiC MOSFET

Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Symmetric Circuit Layout with Decoupled Modular Switching Cells for Multiparalleled SiC Mosfets

Design Method for Multichip Double-Sided Cooling Power Module with Multidimensional Self-and Mutual Inductances

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

Interleaved Planar Packaging Method of Multichip SiC Power Module for Thermal and Electrical Performance Improvement

Dynamic Current Balancing for Paralleled SiC MOSFETs with Circuit Mismatches Considering Circulating C Urrent in Drive Circuit

A Low-Cost Novel Structure for Paralleled SiC JFET/Si MOSFET Cascodes to Balance Turn-on Current and Junction Temperature

Electrothermal Analysis of a Double-side Cooling Power Module with Large-area SiC MOSFETs

A Paralleled SiC MOSFET Half-bridge Unit with Distributed Arrangement of DC Capacitors

Analysis on Static Current Sharing of N-Paralleled Silicon Carbide MOSFETs

Analysis of A Low-Inductance Packaging Layout for Full-Sic Power Module Embedding Split Damping

Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SiC/Si Cascode Devices

Die Current Balancing of a Press-Pack SiC MOSFET

Multichip Parallel Double-Sided Cooling Silicon Carbide Power Module With Low Parasitic Inductance and Balanced Dynamic Current

Parallel Connection of Silicon Carbide MOSFETs Challenges, Mechanism, and Solutions

A Novel SiC MOSFET Module for High-power Soft-switching Converter