Abstract:Silicon carbide (SiC) power modules are attractive in many applications due to the superiority of their semiconductor characteristics. However, power modules are subjected to repetitive thermo-mechanical stress caused by the mismatch of the coefficient of thermal expansion between different layers of materials. Moreover, the relatively smaller die size of SiC chips makes the heat flux increase significantly, which brings new challenges to the thermal management and reliability of SiC power modules. To tackle these challenges, this article proposes a new thermal enhanced packaging method based on vapor chamber (VC) phase change heat spreader (PCHS) for SiC power modules, achieving the advantages of high thermal conductivity, low weight, low cost, and low thermal stress. In this new design, SiC mosfet bare dies are directly soldered on the top of VC-PCHS, which not only act as heat spreaders but also conduct the drain current of mosfets. The integrated VC-PCHS is optimized based on thermal and thermomechanical performance. An SiC power module prototype directly integrated with VC-PCHS is built using a new fabrication process. Both the simulations and experiments demonstrate significant improvements in thermal and thermomechanical performance. The modules integrated with VC-PCHS can operate under 200 W of power dissipation per die (632 Wcm2) without exceeding the maximum rated junction temperature. This article reveals the potential of directly integrating phase change cooling components inside power modules, providing a new solution to improve the thermal performance and reliability of SiC power modules without adding complexity and energy consumptions to external cooling systems.

Design Method for Multichip Double-Sided Cooling Power Module with Multidimensional Self-and Mutual Inductances

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Multichip Parallel Double-Sided Cooling Silicon Carbide Power Module With Low Parasitic Inductance and Balanced Dynamic Current

Interleaved Planar Packaging Method of Multichip SiC Power Module for Thermal and Electrical Performance Improvement

Electrothermal Analysis of a Double-side Cooling Power Module with Large-area SiC MOSFETs

Design of a Novel Double Sided Cooling SiC Power Module Based on Multiple DBC-Stacked

Analysis of A Low-Inductance Packaging Layout for Full-Sic Power Module Embedding Split Damping

Design of Spacer in Silicon Carbide Double-Sided Cooling Packaging Based on Multiphysics Finite Element Topology Optimization

A Novel SiC MOSFET Module for High-power Soft-switching Converter

The Study on Thermal Coupling Effect for SiC Power Module Design Guidelines

Compact Spatially Symmetric Double-Sided Embedded Packaging Method for Parallel SiC MOSFETs

A Novel Double-sided Cooling 3L-ANPC SiC MOSFET Power Module with Interleaved Layout

A Layout Optimization Method to Reduce Commutation Inductance of Multi-Chip Power Module Based on Genetic Algorithm

A SiC Double-Sided Stacked Wire-Bondless Power Module for High-Frequency Power Electronic Applications

Direct Integration of Optimized Phase-Change Heat Spreaders Into SiC Power Module for Thermal Performance Improvements Under High Heat Flux

Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

A Novel Multiple DBC-staked Units Package to Parallel More Chips for SiC Power Module

A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances

Double-sided heat dissipation numerical modeling of an embedded half-bridge power module with multiple chips

Chip Layout Optimization of SiC Power Modules Based on Multiobjective Electro-Thermal Design Strategy

A Double-sided Flip chip SiC Power Module with a Novel Flip Chip Method On DBC By PTFE Coating