Abstract:A low-cost, flexible processor is essential to realise affordable flexible electronic systems and transform everyday objects into smart-objects. Thin film transistors (TFTs) based on metal-oxides (or organics) are ideal candidates as they can be manufactured at low processing temperatures and low-cost per unit area, unlike traditional silicon devices. The development of complementary metal-oxide-semiconductor (CMOS) technology based on these materials remains challenging due to differences in performance between n- and p-type TFTs. Existing geometric rules typically compensate the lower mobility of the metal-oxide p-type TFT by scaling up the width-to-length (W/L) ratio but fail to take into account the significant off-state leakage current. Here we propose the concept of an optimal geometric aspect ratio which maximises the inverter efficiency represented by the average switching current divided by the static currents. This universal method is especially useful for the design of low-power CMOS inverters based on metal-oxides, where the large off-current of the p-type TFT dominates the static power consumption of the inverter. We model the inverter efficiency and noise margins of metal-oxide CMOS inverters with different geometric aspect ratios and compare the performance to different inverter configurations. The modelling results are verified experimentally by fabricating CMOS inverter configurations consisting of n-type indium-silicon-oxide (ISO) TFTs and p-type tin monoxide (SnO) TFTs. Notably, our results show that reducing W/L of metal-oxide p-type TFTs increases the inverter efficiency while reducing the area compared to simply scaling up W/L inversely with mobility. We anticipate this work provides a straightforward method to geometrically optimise flexible CMOS inverters, which will remain relevant even as the performance of TFTs continues to evolve.

Improving Circuit Design for the Stability of Inverters Based on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

Simulation of the Stability of A-Igzo TFT-OLED Pixel Circuits

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

Optimizing Oxygen Plasma Treatment Time to Improve the Characteristics of a-IGZO Thin-Film Transistors and Resistive-Load Inverters

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

35‐4: High‐Mobility and High‐Negative Bias Illumination Stress Stability Based on ITZO/IGZO Bilayer Thin Film Transistors

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Improvement of Electrical Characteristics and Stability in Low-Voltage Indium Oxide Thin-Film Transistors by Using Tungsten Doping

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Optimisation of geometric aspect ratio of thin film transistors for low-cost flexible CMOS inverters and its practical implementation

P‐9: Improved Electrical Stability of Double‐Gate A‐igzo TFTs

Influence of Channel Layer and Passivation Layer on the Stability of Amorphous InGaZnO Thin Film Transistors.

Performance and Stability of Amorphous Ingazno Thin Film Transistors with A Designed Device Structure

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

A Modified NMOS Inverter with Rail-To-Rail Output Swing and Its Application in the Gate Driver Integrated by Metal Oxide TFTs

High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors