Abstract:The thin‐film transistors based on metal‐oxide semiconductors are often plagued by the stubborn trade‐off between mobility and stability. A novel combination of the metal‐oxide bilayer with an ultrathin interlayer of metal‐oxide dielectric forms an abrupt metal‐oxide heterojunction channel, synergistically enhancing performance and reliability. The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS "heterojunction" is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

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Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

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High-Performance Fully Amorphous Bilayer Metal-Oxide Thin Film Transistors Using Ultra-Thin Solution-Processed Zrox Dielectric

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Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways.

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Island‐Like AZO/Al2O3 Bilayer Channel Structure for Thin Film Transistors

Analysis of the contact resistance in amorphous InGaZnO thin film transistors

Mobility–stability trade-off in oxide thin-film transistors

Reliability issues of amorphous oxide semiconductor-based thin film transistors

Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Influence of Source and Drain Contacts on the Properties of the Indium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer