Abstract:In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance. However, SJ MOSFET will turn on the parasitic diodes due to fast reverse recovery, further inducing severe oscillation in the reverse recovery of the device and the corresponding adverse effect on the circuit. In this study, a fast recovery vertical superjunction (SJ) MOSFET with n-Si and p-3C-SiC pillars was studied. Unlike other structures, such as the 4H-SiC superjunction UMOSFET with a heterojunction diode or the ultra-low recovery charge cell-distributed Schottky contacts SJ-MOSFET with integrated isolated NMOS, we introduce a Schottky barrier diode (SBD) on the source contact at the top of the n-Si pillar in the SJ-MOSFET to improve the device reverse recovery. The simulation software TCAD Silvaco was utilized to simulate the device properties. Compared with the conventional Si SJ, the proposed Si/SiC SJ with the Schottky barrier diode (SBD) connected demonstrated a lower reverse recovery charge, which was reduced by 90.5%, respectively. The waveform of the reverse recovery current demonstrates that the electrons in the device are withdrawn from SBD during reverse recovery, preventing the opening of the parasitic diode in the SJ MOSFET. Finally, another structure is illustrated to decrease the gate capacitance by introducing a thin p-base layer between the gate metal and N-Si pillar so that it can improve the switching characteristics of devices. The open-loss and off-loss of the improved device were reduced by 33% and 42.3%, respectively.

Floating Island Structure with Metal Bridge to Resolve the Turn-On Recovery Problem

A Novel Solution to the Turn-On Recovery Problem of the Floating Island Device

2Kv SiC Floating Island SBD with N+ Buffer

4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination

The Impact of the Island Layout on the Performance of the 4H-Sic Floating Island Device

A Novel Planar Vertical Double-Diffused Metal-Oxide-semiconductor Field-Effect Transistor with Inhomogeneous Floating Islands

Analytical Model and Optimization for SiC Floating Island Structure

A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness

New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics.

A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars

Analytical Model and Design Strategy for GaN Vertical Floating Island Schottky Diodes

A Low Loss Soi Lateral Trench Igbt and Superjunction Device with Insulated Trench Barrier

Super Junction LDMOS with Enhanced Dielectric Layer Electric Field for High Breakdown Voltage

A SUPERJUNCTION INSULATED GATE BIPOLAR TRANSISTOR WITH BILATERAL HK INSULATORS: A SOLUTION TO CHARGE IMBALANCE

A New Super-Junction Vdmos Realizing Fast Reverse Recovery

A High Voltage Superjunction MOSFET with Enhanced Reverse Recovery Performance

High Voltage SOI SJ-LDMOS with Dynamic Buffer

High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect

Design and Process Analysis of a Split-Gate Trench Power MOSFET with Bottom-Trench Hk-Pillar Superjunction for Enhanced Performance

Single-Event Burnout Hardness for the 4H-Sic Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer

The GaN Trench Gate MOSFET with Floating Islands