Abstract:Two-dimensional transition-metal dichalcogenides (TMDs) have been one of the hottest focus of materials due to the most beneficial electronic and optoelectronic properties. Up to now, one of the big challenges is the synthesis of large-area layer-number-controlled single-crystal films. However, the poor understanding of the growth mechanism seriously hampers the progress of the scalable production of TMDs with precisely tunable thickness at an atomic scale. Here, the growth mechanisms in the vertical direction were systemically studied based on the density functional theory (DFT) calculation and an advanced chemical vapor deposition (CVD) growth. As a result, the U-type relation of the TMD layer number to the ratio of metal/chalcogenide is confirmed by the capability of ultrafine tuning of the experimental conditions in the CVD growth. In addition, high-quality uniform monolayer, bilayer, trilayer, and multilayer TMDs in a large area (8 cm2) were efficiently synthesized by applying this modified CVD. Although bilayer TMDs can be obtained at both high and low ratios of metal/chalcogenide based on the suggested mechanism, they demonstrate significantly different optical and electronic transport properties. The modified CVD strategy and the proposed mechanism should be helpful for synthesizing and large-area thickness-controlled TMDs and understanding their growth mechanism and could be used in integrated electronics and optoelectronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c08335?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c08335</a>.Detailed parameter of every growth situation in WS2 CVD growth process; the synchronous optical microscopy images of WS2 in the CVD growth process; binding energy of the WS3 cluster on WS2 crystal edge (before and after adsorbed WSO2); DFT results of the binding energy of different WSx clusters on the top surface (EbP) and edge (EbE) of WS2 crystal; and diffusion barriers of WS1 and WS3 clusters on the surface of WS2 (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c08335/suppl_file/am0c08335_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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